Jilin Sino Microelectronics JCS4N80FC MOSFET with 800 volt drain source voltage and low switching losses
Key Attributes
Model Number:
JCS4N80FC
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.6Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
-
Output Capacitance(Coss):
100pF
Input Capacitance(Ciss):
880pF
Pd - Power Dissipation:
99.2W
Gate Charge(Qg):
29.5nC@10V
Mfr. Part #:
JCS4N80FC
Package:
TO-220MF
Product Description
Product Overview
The JCS4N80C is an N-channel enhancement mode field-effect transistor designed for applications such as switched-mode power supplies and electronic ballasts. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is a RoHS compliant planar MOS product.
Product Attributes
- Brand: JCS
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Device Weight (typ) | Package | Main Characteristics |
| JCS4N80VC-V-B / JCS4N80VC-V-BR | N/A | 0.35 g | IPAK | ID: 4A, VDSS: 800 V, RDS(ON)-max (@VGS=10V): 2.6, Qg-typ: 29.5nC |
| JCS4N80RC-R-B / JCS4N80RC-R-BR / JCS4N80RC-R-A / JCS4N80RC-R-AR | JCS4N80R | 0.3 g | DPAK | ID: 4A, VDSS: 800 V, RDS(ON)-max (@VGS=10V): 2.6, Qg-typ: 29.5nC |
| JCS4N80FC-F-B / JCS4N80FC-F-BR | N/A | 2.20 g | TO-220MF | ID: 4A, VDSS: 800 V, RDS(ON)-max (@VGS=10V): 2.6, Qg-typ: 29.5nC |
| JCS4N80CC-C-B / JCS4N80CC-C-BR | JCS4N80C | 2.15 g | TO-220C | ID: 4A, VDSS: 800 V, RDS(ON)-max (@VGS=10V): 2.6, Qg-typ: 29.5nC |
| JCS4N80BC-B-B / JCS4N80BC-B-BR | JCS4N80B | 1.71 g | TO-262 | ID: 4A, VDSS: 800 V, RDS(ON)-max (@VGS=10V): 2.6, Qg-typ: 29.5nC |
| JCS4N80SC-S-B / JCS4N80SC-S-BR / JCS4N80SC-S-A / JCS4N80SC-S-AR | JCS4N80S | 1.68 g | TO-263 | ID: 4A, VDSS: 800 V, RDS(ON)-max (@VGS=10V): 2.6, Qg-typ: 29.5nC |
| JCS4N80VC-V5-B / JCS4N80VC-V5-BR | N/A | 0.35 g | IPAK-WS2 | ID: 4A, VDSS: 800 V, RDS(ON)-max (@VGS=10V): 2.6, Qg-typ: 29.5nC |
| JCS4N80BC-B2-B / JCS4N80BC-B2-BR | JCS4N80B | 1.65 g | TO-262-S1 | ID: 4A, VDSS: 800 V, RDS(ON)-max (@VGS=10V): 2.6, Qg-typ: 29.5nC |
2409280132_Jilin-Sino-Microelectronics-JCS4N80FC_C2693302.pdf
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