1200V 150A IGBT half bridge module JIAENSEMI GL150HF120F1UR1 ideal for welding and inductive heating
Key Attributes
Model Number:
GL150HF120F1UR1
Product Custom Attributes
Td(off):
460ns
Pd - Power Dissipation:
1.04kW
Td(on):
95ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.31nF
Input Capacitance(Cies):
6.4nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@2mA
Operating Temperature:
-40℃~+150℃
Pulsed Current- Forward(Ifm):
300A
Switching Energy(Eoff):
6.3mJ
Turn-On Energy (Eon):
17mJ
Mfr. Part #:
GL150HF120F1UR1
Product Description
Product Overview
The GL150HF120F1UR1 is a 1200V, 150A IGBT half-bridge module featuring planar field-stop technology for high RBSOA capability and low turn-off losses. It is suitable for applications such as inductive heating, welding, and high-frequency switching.
Product Attributes
- Brand: JIAEN Semiconductor
- Internal Gate Resistor: 5
- Module Baseplate Material: Cu
- Internal Isolation: basic insulation (class 1, IEC 61140)
- Comparative Tracking Index: >200
Technical Specifications
| Model | Parameter | Test Conditions | Min | Typ | Max | Units |
| GL150HF120F1UR1 | VCES | Collector-Emitter Voltage (Tvj=25) | 1200 | V | ||
| VGES | Gate-Emitter Voltage | + 20 | V | |||
| IC | Continuous Collector Current (TC=80,Tvj max=150) | 150 | A | |||
| ICRM | Repetitive Peak Collector Current | 300 | A | |||
| PD | Maximum Power Dissipation (TC=25,Tvj max=150) | 1040 | W | |||
| VCE(sat) | Collector-Emitter Saturation Voltage (VGE=15V, IC=150A, Tvj=25) | 2.5 | V | |||
| VGE(th) | Gate Threshold Voltage (VGE=VCE, IC=2mA, Tvj=25) | 5.0 | 6.0 | 7.0 | V | |
| Qg | Total Gate Charge (VGE=-15V+15V) | 1.1 | uC | |||
| ICES | Collector-Emitter Leakage Current (VCE=1200V, VGE=0V, Tvj=25) | 1.0 | mA | |||
| IGES | Gate-Emitter Leakage Current, Forward (VGE=20V, VCE=0V, Tvj=25) | 200 | nA | |||
| Rth j-c | Thermal Resistance, Junction to Case (Per IGBT) | 0.12 | K/W | |||
| Diode | VRRM | Repetitive Peak Reverse Voltage | 1200 | V | ||
| IF | Continuous DC Forward Current | 150 | A | |||
| IFRM | Repetitive Peak Collector Current | 300 | A | |||
| VF | Diode Forward Voltage (IF = 150A, Tvj=25) | 2.1 | 3.0 | V | ||
| IRM | Peak Reverse Recovery Current (IC = 150A, VR=600V, -di/dt=2400A/us, VGE = -15V, Tvj=25) | 75 | A | |||
| Qrr | Reverse Recovery Charge (Tvj=25) | 7.0 | uC | |||
| Rth j-c | Thermal Resistance, Junction to Case (Per Diode) | 0.24 | K/W | |||
| Module | Rthc-h | Thermal ResistanceCase to Heatsink (Per Module) | 0.05 | K/W | ||
| LsCE | Stray Inductance Module | 30 | nH | |||
| RCC+EE | Module Lead Resistance Terminals-Chip (TC = 25 Per Switch) | 0.65 | m | |||
| Tstg | Storage Temperature | -40 | 125 | |||
| M | Module Mounting Torque (M6 screws) | 3.0 | 5.0 | Nm | ||
| M | Terminal Mounting Torque (M5 screws) | 2.5 | 6.0 | Nm | ||
| G | Weight | 145 | g | |||
| VISO | Isolation Test Voltage (RMS, f=50 Hz, t=1 min) | 3.0 | kV | |||
| Clearance Distance in Air | Terminal to heatsink | 17 | mm | |||
| Clearance Distance in Air | Terminal to terminal | 9.5 | mm | |||
| Surface Creepage Distance | Terminal to heatsink | 17 | mm | |||
| Surface Creepage Distance | Terminal to terminal | 20 | mm |
2509021810_JIAENSEMI-GL150HF120F1UR1_C51484289.pdf
Related Products
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
