rugged JIAENSEMI JNG50T120HIMU2 trench IGBT with fast switching and positive temperature coefficient
Key Attributes
Model Number:
JNG50T120HIMU2
Product Custom Attributes
Pd - Power Dissipation:
833W
Td(off):
190ns
Td(on):
44ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
55pF
Input Capacitance(Cies):
8.408nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.93V@250uA
Operating Temperature:
-55℃~+175℃
Pulsed Current- Forward(Ifm):
100A
Output Capacitance(Coes):
197pF
Reverse Recovery Time(trr):
94ns
Switching Energy(Eoff):
3.73mJ
Turn-On Energy (Eon):
2.57mJ
Mfr. Part #:
JNG50T120HIMU2
Package:
TO-247
Product Description
Product Overview
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as UPS, Motor drives, PFC, Portable power stations, and other soft switching applications. These devices are reliable, rugged, and feature a positive temperature coefficient and fast switching capabilities.
Product Attributes
- Brand: JIAEN
- Certifications: Halogen Free and Green Devices Available
Technical Specifications
| Parameter | Value | Units | Conditions | ||
| Absolute Maximum Ratings | |||||
| VCES Collector-Emitter Voltage | 1200 | V | |||
| VGES Gate-Emitter Voltage | + 30 | V | |||
| IC Continuous Collector Current | 100 | A | ( TC=25 ) | ||
| IC Continuous Collector Current | 50 | A | ( TC=100) | ||
| ICM Pulsed Collector Current | 200 | A | (Note 1) | ||
| IF Diode Continuous Forward Current | 50 | A | ( TC=100 ) | ||
| IFM Diode Maximum Forward Current | 100 | A | (Note 1) | ||
| tsc Short Circuit Withstand Time | 8 | us | |||
| PD Maximum Power Dissipation | 833 | W | ( TC=25 ) | ||
| TJ Operating Junction Temperature Range | -55 to +175 | ||||
| Thermal Characteristics | |||||
| Rth j-c Thermal Resistance, Junction to case for IGBT | 0.18 | / W | |||
| Rth j-c Thermal Resistance, Junction to case for Diode | 0.37 | / W | |||
| Rth j-a Thermal Resistance, Junction to Ambient | 40 | / W | |||
| Electrical Characteristics ( IGBT ) | |||||
| BVCES Collector-Emitter Breakdown Voltage | 1200 | V | VGE= 0V, IC= 1mA | ||
| ICES Collector-Emitter Leakage Current | - | 10 | uA | VCE= 1200V, VGE= 0V | |
| IGES Gate Leakage Current, Forward | - | + 200 | nA | VGE= + 20V, VCE= 0V | |
| VGE(th) Gate Threshold Voltage | 4.93 | - | 6.93 | V | VGE= VCE, IC= 250uA |
| VCE(sat) Collector-Emitter Saturation Voltage | - | 1.55 | - | V | VGE=15V, IC= 50A |
| Qg Total Gate Charge | - | 291 | - | nC | VCC=960V VGE=15V IC=50A |
| Qge Gate-Emitter Charge | - | 81 | - | nC | |
| Qgc Gate-Collector Charge | - | 110 | - | nC | |
| td(on) Turn-on Delay Time | - | 44 | - | ns | VCC=600V VGE=15V IC=50A RG=5 Inductive Load TC=25 |
| tr Turn-on Rise Time | - | 95 | - | ns | |
| td(off) Turn-off Delay Time | - | 190 | - | ns | |
| tf Turn-off Fall Time | - | 264 | - | ns | |
| Eon Turn-on Switching Loss | - | 2.57 | - | mJ | |
| Eoff Turn-off Switching Loss | - | 3.73 | - | mJ | |
| Ets Total Switching Loss | - | 6.31 | - | mJ | |
| Cies Input Capacitance | - | 8408 | - | pF | VCE=25V VGE=0V f = 1MHz |
| Coes Output Capacitance | - | 197 | - | pF | |
| Cres Reverse Transfer Capacitance | - | 55 | - | pF | |
| Electrical Characteristics of Diode | |||||
| VF Diode Forward Voltage | - | 2.0 | 3.5 | V | IF=50A |
| trr Diode Reverse Recovery Time | - | 94 | - | ns | VCE = 600V IF= 50A DiF/dt = 200A/us |
| Irr Diode peak Reverse Recovery Current | - | 9.7 | - | A | |
| Qrr Diode Reverse Recovery Charge | - | 225 | - | nC | |
2509021810_JIAENSEMI-JNG50T120HIMU2_C51484286.pdf
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