High voltage NPT IGBT JIAENSEMI JNG15N120AI 1200V 15A transistor for energy soft switching and inverter
Key Attributes
Model Number:
JNG15N120AI
Product Custom Attributes
Td(off):
260ns
Pd - Power Dissipation:
175W
Td(on):
33ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
110pF
Input Capacitance(Cies):
550pF
IGBT Type:
NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@250uA
Pulsed Current- Forward(Ifm):
45A
Output Capacitance(Coes):
180pF
Reverse Recovery Time(trr):
255ns
Switching Energy(Eoff):
900uJ
Turn-On Energy (Eon):
1.3mJ
Mfr. Part #:
JNG15N120AI
Package:
TO-3P
Product Description
Product Overview
The JIAEN JNG15N120AI is an NPT IGBT designed for high-speed switching applications. It offers lower losses and higher energy efficiency, making it suitable for induction heating (IH), UPS, general inverters, and other soft switching applications. Key features include a 1200V voltage rating, 15A current capability, soft current turn-off waveforms, and square RBSOA using NPT technology.
Product Attributes
- Brand: JIAEN
- Product Line: NPT IGBT
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| IGBT Electrical Characteristics | BVCES | VGE= 0V, IC= 250uA | 1200 | - | - | V |
| ICES | VCE= 1200V, VGE= 0V | - | - | 250 | uA | |
| VGE(th) | VGE= VCE, IC= 250uA | 4 | - | 6 | V | |
| VCE(sat) | VGE=15V, IC= 15A | - | 2.2 | 2.7 | V | |
| Qg | VCC=960V VGE=15V IC=15A | - | 70 | - | nC | |
| IGBT Switching Characteristics | td(on) | VCC=600V VGE=15V IC=15A RG=28 Inductive Load TC=25 | - | 33 | - | ns |
| tr | VCC=600V VGE=15V IC=15A RG=28 Inductive Load TC=25 | - | 37 | - | ns | |
| td(off) | VCC=600V VGE=15V IC=15A RG=28 Inductive Load TC=25 | - | 260 | - | ns | |
| tf | VCC=600V VGE=15V IC=15A RG=28 Inductive Load TC=25 | - | 135 | - | ns | |
| Diode Electrical Characteristics | VF | IF=15A | - | 2.0 | 2.8 | V |
| trr | VCE = 600V IF= 15A dIF/dt = 400A/us | - | 255 | - | ns | |
| Qrr | VCE = 600V IF= 15A dIF/dt = 400A/us | - | 2015 | - | nC | |
| Thermal Characteristics | Rth j-c (IGBT) | - | - | 0.70 | - | / W |
| Rth j-c (Diode) | - | - | 0.98 | - | / W | |
| Rth j-a | - | - | 40 | - | / W | |
| Absolute Maximum Ratings | VCES | - | - | 1200 | - | V |
| VGES | - | - | + 20 | - | V | |
| IC (TC=25) | - | - | 30 | - | A | |
| IC (TC=100) | - | - | 15 | - | A | |
| ICM (Note 1) | - | - | 45 | - | A | |
| PD (TC=25) | - | - | 175 | - | W |
2509021810_JIAENSEMI-JNG15N120AI_C51484281.pdf
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