Power MOSFET Transistor ISC IRFP4110 N Channel Type for High Current and High Frequency Applications

Key Attributes
Model Number: IRFP4110
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
RDS(on):
4.5mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Pd - Power Dissipation:
370W
Mfr. Part #:
IRFP4110
Package:
TO-247
Product Description

Product Overview

The INCHANGE Semiconductor IRFP4110/IIRFP4110 is an N-Channel MOSFET Transistor designed for high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, high-speed power switching, and hard-switched and high-frequency circuits. It features a low static drain-source on-resistance (RDS(on)4.5m), enhancement mode operation, and 100% avalanche tested for robust performance.

Product Attributes

  • Brand: INCHANGE Semiconductor
  • Registered Trademark: isc, iscsemi
  • Product Series: N-Channel MOSFET Transistor
  • Model: IRFP4110, IIRFP4110

Technical Specifications

SymbolParameterConditionsMinTypMaxUnit
VDSSDrain-Source Voltage100V
VGSGate-Source Voltage20V
IDDrain Current-Continuous120A
IDMDrain Current-Single Pulsed670A
PDTotal Dissipation @TC=25370W
Tj Max.Operating Junction Temperature175
TstgStorage Temperature-55175
Rth(j-c)Channel-to-case thermal resistance0.402/W
Rth(j-a)Channel-to-ambient thermal resistance40/W
BVDSSDrain-Source Breakdown VoltageVGS=0V; ID=250A100V
VGS(th)Gate Threshold VoltageVDS=VGS; ID=250A2.04.0V
RDS(on)Drain-Source On-ResistanceVGS=10V; ID=75A4.5m
IGSSGate-Source Leakage CurrentVGS= 20V0.1A
IDSSDrain-Source Leakage CurrentVDS=100V; VGS= 0V20A
VSDDiode forward voltageIS=75A, VGS = 0V1.3V

2411220608_ISC-IRFP4110_C2976490.pdf

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