Power MOSFET Transistor ISC IRFP4110 N Channel Type for High Current and High Frequency Applications
Product Overview
The INCHANGE Semiconductor IRFP4110/IIRFP4110 is an N-Channel MOSFET Transistor designed for high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, high-speed power switching, and hard-switched and high-frequency circuits. It features a low static drain-source on-resistance (RDS(on)4.5m), enhancement mode operation, and 100% avalanche tested for robust performance.
Product Attributes
- Brand: INCHANGE Semiconductor
- Registered Trademark: isc, iscsemi
- Product Series: N-Channel MOSFET Transistor
- Model: IRFP4110, IIRFP4110
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| VDSS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous | 120 | A | |||
| IDM | Drain Current-Single Pulsed | 670 | A | |||
| PD | Total Dissipation @TC=25 | 370 | W | |||
| Tj Max. | Operating Junction Temperature | 175 | ||||
| Tstg | Storage Temperature | -55 | 175 | |||
| Rth(j-c) | Channel-to-case thermal resistance | 0.402 | /W | |||
| Rth(j-a) | Channel-to-ambient thermal resistance | 40 | /W | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V; ID=250A | 100 | V | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS; ID=250A | 2.0 | 4.0 | V | |
| RDS(on) | Drain-Source On-Resistance | VGS=10V; ID=75A | 4.5 | m | ||
| IGSS | Gate-Source Leakage Current | VGS= 20V | 0.1 | A | ||
| IDSS | Drain-Source Leakage Current | VDS=100V; VGS= 0V | 20 | A | ||
| VSD | Diode forward voltage | IS=75A, VGS = 0V | 1.3 | V |
2411220608_ISC-IRFP4110_C2976490.pdf
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