MOSFET Jilin Sino Microelectronics JCS10N60FC designed for switch mode power supplies and ballasts
Key Attributes
Model Number:
JCS10N60FC
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
850mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 N-channel
Output Capacitance(Coss):
200pF
Input Capacitance(Ciss):
1.8nF
Pd - Power Dissipation:
40W
Gate Charge(Qg):
51.5nC@10V
Mfr. Part #:
JCS10N60FC
Package:
TO-220F-3
Product Description
Product Overview
The JCS10N60C is a high-performance N-channel MOSFET designed for various power applications. It features low gate charge, low Crss, fast switching speeds, and high dv/dt capability. This product is 100% avalanche tested and RoHS compliant, making it suitable for high efficiency switch mode power supplies, electronic lamp ballasts, and LED power supplies.
Product Attributes
- Brand: JCS
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rdson-max () (Vgs=10V) | Qg-Typ (nC) | Applications |
| JCS10N60FC-F-B | JCS10N60F | TO-220MF | 10 | 600 | 0.85 | 51.5 | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, LED power supplies |
| JCS10N60CC-C-B | JCS10N60C | TO-220C | 10 | 600 | 0.85 | 51.5 | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, LED power supplies |
| JCS10N60FC-F2-B | JCS10N60F | TO-220MF-K2 | 10 | 600 | 0.85 | 51.5 | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, LED power supplies |
Absolute Maximum Ratings (Tc=25)
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | 600 | V |
| Continuous Drain Current | ID (T=25) | 10* | A |
| Continuous Drain Current | ID (T=100) | 6.0* | A |
| Drain Current pulsenote 1 | IDM | 40* | A |
| Gate-Source Voltage | VGSS | 30 | V |
| Single Pulsed Avalanche Energynote 2 | EAS | 1050 | mJ |
| Avalanche Currentnote 1 | IAR | 10 | A |
| Repetitive Avalanche Currentnote 1 | EAR | 15.6 | mJ |
| Peak Diode Recovery dv/dtnote 3 | dv/dt | 5.0 | V/ns |
| Power Dissipation TC=25 | PD | 40 | W |
| Power Dissipation -Derate above 25 | 0.32 | W/ | |
| Operating and Storage Temperature Range | TJTSTG | -55+150 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 |
Electrical Characteristics (Tc=25 unless otherwise specified)
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 600 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.6 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=600V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=480V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=5.0A 25 | - | 0.65 | 0.85 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=5.0A 100 | - | 1.14 | 1.50 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=5.0A 150 | - | 1.69 | 2.0 | |
| Forward Transconductance | gfs | VDS = 40V, ID=5.0Anote 4 | - | 5.7 | - | S |
| Dynamic Characteristics | ||||||
| Gate resistance | Rg | F=1.0MHZ open drain VDS=25V, VGS =0V, f=1.0MHZ | 0.8 | - | 6.5 | |
| Input capacitance | Ciss | 800 | 1435 | pF | ||
| Output capacitance | Coss | 60 | 151.4 | pF | ||
| Reverse transfer capacitance | Crss | 2 | 16.9 | 30 | pF | |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=300V,ID=10A,RG=25 note 45 | - | 31.2 | 65 | ns |
| Turn-On rise time | tr | - | 57.6 | 95 | ns | |
| Turn-Off delay time | td(off) | - | 96 | 135 | ns | |
| Turn-Off Fall time | tf | - | 52.8 | 95 | ns | |
| Total Gate Charge | Qg | VDS =480V , ID=10A VGS =10V note 45 | - | 51.5 | 75 | nC |
| Gate-Source charge | Qgs | - | 7.3 | 16 | nC | |
| Gate-Drain charge | Qgd | - | 18 | 36 | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 10 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 40 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=10A | - | - | 1.2 | V |
| Reverse recovery time | trr | VGS=0V, IS=10A dIF/dt=100A/s (note 4) | - | 405 | 900 | ns |
| Reverse recovery charge | Qrr | - | 9.0 | 20 | C | |
Thermal Characteristics
| Parameter | Symbol | Max | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) (JCS10N60FC) | 3.1 | /W |
| Thermal Resistance, Junction to Case | Rth(j-c) (JCS10N60CC) | 0.87 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) (JCS10N60FC) | 56 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) (JCS10N60CC) | 62.5 | /W |
2411201842_Jilin-Sino-Microelectronics-JCS10N60FC_C2693299.pdf
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