High speed IGBT JIAENSEMI JNG40T65HS1 650V 40A suitable for inverter and motor control applications
Key Attributes
Model Number:
JNG40T65HS1
Product Custom Attributes
Pd - Power Dissipation:
278W
Td(off):
86ns
Td(on):
19ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
11.8pF
Input Capacitance(Cies):
1.34nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@250uA
Operating Temperature:
-55℃~+150℃
Pulsed Current- Forward(Ifm):
120A
Output Capacitance(Coes):
98pF
Reverse Recovery Time(trr):
148ns
Switching Energy(Eoff):
500uJ
Turn-On Energy (Eon):
1.3mJ
Mfr. Part #:
JNG40T65HS1
Package:
TO-247
Product Description
Product Overview
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as Motor control, general inverter, and other soft switching applications. This IGBT features 650V, 40A capability with a typical VCE(sat) of 2.0V at VGE=15V and IC=40A. It provides high-speed switching, higher system efficiency, soft current turn-off waveforms, and a square RBSOA.
Product Attributes
- Brand: JIAEN
- Product Series: JNG40T65HS1
- Package Outline: TO247
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| Collector-Emitter Voltage | VCES | 650 | V | |||
| Gate-Emitter Voltage | VGES | +30 | V | |||
| Continuous Collector Current (TC=25) | IC | 80 | A | |||
| Continuous Collector Current (TC=100) | IC | 40 | A | |||
| Pulsed Collector Current (Note 1) | ICM | 120 | A | |||
| Diode Continuous Forward Current (TC=100) | IF | 40 | A | |||
| Diode Maximum Forward Current (Note 1) | IFM | 120 | A | |||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Maximum Power Dissipation (TC=25) | PD | 278 | W | |||
| Maximum Power Dissipation (TC=100) | PD | 111 | W | |||
| Operating Junction Temperature Range | TJ | -55 | +150 | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to case for IGBT | Rth j-c | 0.45 | / W | |||
| Thermal Resistance, Junction to case for Diode | Rth j-c | 1.5 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 40 | / W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 250uA | 650 | - | - | V |
| Collector-Emitter Leakage Current | ICES | VCE= 650V, VGE= 0V | - | - | 100 | uA |
| Gate Leakage Current, Forward | IGES | VGE=20V, VCE= 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC= 250uA | 5.1 | - | 6.9 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 40A | - | 2.0 | 2.5 | V |
| Total Gate Charge | Qg | VCC=480V, VGE=15V, IC=40A | - | 594 | - | nC |
| Gate-Emitter Charge | Qge | - | 119 | - | nC | |
| Gate-Collector Charge | Qgc | - | 374 | - | nC | |
| Turn-on Delay Time | td(on) | VCC=400V, VGE=15V, IC=40A, RG=15, Inductive Load | - | 19 | - | ns |
| Turn-on Rise Time | tr | - | 65 | - | ns | |
| Turn-off Delay Time | td(off) | - | 86 | - | ns | |
| Turn-off Fall Time | tf | - | 98 | - | ns | |
| Turn-on Switching Loss | Eon | - | 1.3 | - | mJ | |
| Turn-off Switching Loss | Eoff | - | 0.5 | - | mJ | |
| Total Switching Loss | Ets | - | 1.8 | - | mJ | |
| Input Capacitance | Cies | VCE=25V, VGE=0V, f = 1MHz | - | 1340 | - | pF |
| Output Capacitance | Coes | - | 98 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 11.8 | - | pF | |
| Electrical Characteristics of Diode (TC=25 unless otherwise noted) | ||||||
| Diode Forward Voltage | VF | IF=40A | - | 1.5 | 3.0 | V |
| Diode Reverse Recovery Time | trr | VCE = 400V, IF= 40A, Rg=15 | - | 148 | - | ns |
| Diode peak Reverse Recovery Current | IRR | - | 13.8 | - | A | |
| Diode Reverse Recovery Charge | Qrr | - | 1055 | - | nC | |
2509021810_JIAENSEMI-JNG40T65HS1_C51484255.pdf
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