power MOSFET Jilin Sino Microelectronics JCS13N50FC N channel transistor for switching power supplies
Key Attributes
Model Number:
JCS13N50FC
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃
RDS(on):
490mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.155nF@25V
Pd - Power Dissipation:
190W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
JCS13N50FC
Package:
TO-220MF
Product Description
Product Overview
The JCS13N50C is a N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and UPS applications. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: JCS
- Certifications: RoHS
Technical Specifications
| Order Codes | Marking | Package | Main Characteristics | ID | VDSS | Rds(on) (@Vgs=10V) | Qg |
| JCS13N50BC-B-B JCS13N50BC-B-BR | JCS13N50BC | TO-262 | N N-CHANNEL MOSFET | 13 A | 500 V | 0.49 | 27 nC |
| JCS13N50SC-S-B JCS13N50SC-S-BR JCS13N50SC-S-A JCS13N50SC-S-AR | JCS13N50SC | TO-263 | N N-CHANNEL MOSFET | 13 A | 500 V | 0.49 | 27 nC |
| JCS13N50CC-C-B JCS13N50CC-C-BR | JCS13N50CC | TO-220C | N N-CHANNEL MOSFET | 13 A | 500 V | 0.49 | 27 nC |
| JCS13N50FC-F-B JCS13N50FC-F-BR | JCS13N50FC | TO-220MF | N N-CHANNEL MOSFET | 13 A | 500 V | 0.49 | 27 nC |
Absolute Maximum Ratings (Tc=25)
| Parameter | Symbol | JCS13N50BC/SC/CC | JCS13N50FC | Unit |
| Drain-Source Voltage | VDSS | 500 | 500 | V |
| Drain Current -Continuous (T=25) | ID | 13.0* | 13.0* | A |
| Drain Current -Continuous (T=100) | ID | 8* | 8* | A |
| Drain Current -Pulse (note 1) | IDM | 52* | 52* | A |
| Gate-Source Voltage | VGSS | 30 | 30 | V |
| Single Pulsed Avalanche Energy (note 2) | EAS | 840 | 840 | mJ |
| Avalanche Current (note 1) | IAR | 13.0 | 13.0 | A |
| Repetitive Avalanche Energy (note 1) | EAR | 4.8 | 4.8 | mJ |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 4.5 | 4.5 | V/ns |
| Power Dissipation (TC=25) | PD | 190 | 190 | W |
| Power Dissipation -Derate above 25 | 1.57 | 1.57 | W/ | |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | -55+150 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | 300 |
Electrical Characteristics (Tc=25 unless otherwise specified)
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 500 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS /TJ | ID=250A, referenced to 25 | - | 0.5 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=500V, VGS=0V, TC=25 | - | - | 1.0 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=400V, TC=125 | - | - | 100 | A |
| Gate-body Leakage Current, Forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body Leakage Current, Reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=6.5A | - | 0.41 | 0.49 | |
| Forward Transconductance | gfs | VDS = 40V , ID=6.5Anote 4 | - | 14 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 1870 | 2155 | pF |
| Output Capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 170 | 225 | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 14 | 20 | pF |
Thermal Characteristics
| Parameter | Symbol | JCS13N50BC/SC/CC | JCS13N50FC | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.79 | 2.55 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | 62.5 | /W |
Switching Characteristics (note 4, 5)
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Turn-On delay time | td(on) | VDD=250V,ID=13A,RG=25 | - | 70 | 160 | ns |
| Turn-On rise time | tr | VDD=250V,ID=13A,RG=25 | - | 145 | 240 | ns |
| Turn-Off delay time | td(off) | VDD=250V,ID=13A,RG=25 | - | 135 | 230 | ns |
| Turn-Off Fall time | tf | VDD=250V,ID=13A,RG=25 | - | 45 | 120 | ns |
| Total Gate Charge | Qg | VDS =400V , ID=13A VGS =10V | - | 27 | 35 | nC |
| Gate-Source charge | Qgs | VDS =400V , ID=13A VGS =10V | - | 9 | - | nC |
| Gate-Drain charge | Qgd | VDS =400V , ID=13A VGS =10V | - | 12 | - | nC |
Drain-Source Diode Characteristics and Maximum Ratings
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Maximum Continuous Drain-Source Diode Forward Current | IS | - | - | 13 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 52 | A | |
| Maximum Continuous Drain-Source Diode Forward Current | VSD | VGS=0V, IS=13A | - | - | 1.5 | V |
| Reverse Recovery Time | trr | VGS=0V, IS=13A dIF/dt=100A/s (note 4) | - | - | 400 | ns |
| Reverse Recovery Charge | Qrr | VGS=0V, IS=13A dIF/dt=100A/s (note 4) | - | - | 4.3 | C |
2411201841_Jilin-Sino-Microelectronics-JCS13N50FC_C2693291.pdf
Related Products
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
