Trench IGBT JIAENSEMI JNG20T65PS1 offering 650 volt 20 amp capability for soft switching and inverter
Key Attributes
Model Number:
JNG20T65PS1
Product Custom Attributes
Td(off):
71ns
Pd - Power Dissipation:
125W
Td(on):
17ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
7.5pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@250uA
Gate Charge(Qg):
271nC
Operating Temperature:
-55℃~+150℃
Reverse Recovery Time(trr):
110ns
Switching Energy(Eoff):
410uJ
Turn-On Energy (Eon):
460uJ
Input Capacitance(Cies):
831pF
Pulsed Current- Forward(Ifm):
60A
Output Capacitance(Coes):
50pF
Mfr. Part #:
JNG20T65PS1
Package:
TO-220
Product Description
JNG20T65PS1 IGBT
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. The JNG20T65PS1 features 650V, 20A capability with a typical VCE(sat) of 2.0V at VGE=15V and IC=20A, providing high-speed switching and improved system efficiency with soft current turn-off waveforms and square RBSOA.
Product Attributes
- Brand: JIAEN Semiconductor
- Product Series: Trench IGBTs
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| Collector-Emitter Voltage | VCES | 650 | V | |||
| Gate-Emitter Voltage | VGES | +30 | V | |||
| Continuous Collector Current (TC=25) | IC | 40 | A | |||
| Continuous Collector Current (TC=100) | IC | 20 | A | |||
| Pulsed Collector Current (Note 1) | ICM | 60 | A | |||
| Diode Continuous Forward Current (TC=100) | IF | 20 | A | |||
| Diode Maximum Forward Current (Note 1) | IFM | 60 | A | |||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Maximum Power Dissipation (TC=25) | PD | 125 | W | |||
| Maximum Power Dissipation (TC=100) | PD | 50 | W | |||
| Operating Junction Temperature Range | TJ | -55 | +150 | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to case for IGBT | Rth j-c | 1.0 | / W | |||
| Thermal Resistance, Junction to case for Diode | Rth j-c | 1.6 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 62 | / W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 250uA | 650 | - | - | V |
| Collector-Emitter Leakage Current | ICES | VCE= 650V, VGE= 0V | - | - | 100 | uA |
| Gate Leakage Current, Forward | IGES | VGE=20V, VCE= 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC= 250uA | 5.1 | - | 6.9 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 20A | - | 2.0 | 2.5 | V |
| Total Gate Charge | Qg | VCC=480V VGE=15V IC=20A | - | 271 | - | nC |
| Gate-Emitter Charge | Qge | - | 70 | - | nC | |
| Gate-Collector Charge | Qgc | - | 131 | - | nC | |
| Turn-on Delay Time | td(on) | VCC=400V VGE=15V IC=20A RG=15 Inductive Load TC=25 | - | 17 | - | ns |
| Turn-on Rise Time | tr | - | 31 | - | ns | |
| Turn-off Delay Time | td(off) | - | 71 | - | ns | |
| Turn-off Fall Time | tf | - | 99 | - | ns | |
| Turn-on Switching Loss | Eon | - | 0.46 | - | mJ | |
| Turn-off Switching Loss | Eoff | - | 0.41 | - | mJ | |
| Total Switching Loss | Ets | - | 0.87 | - | mJ | |
| Input Capacitance | Cies | VCE=25V VGE=0V f = 1MHz | - | 831 | - | pF |
| Output Capacitance | Coes | - | 50 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 7.5 | - | pF | |
| Electrical Characteristics of Diode (TC=25 unless otherwise noted) | ||||||
| Diode Forward Voltage | VF | IF=20A | - | 1.5 | 3.0 | V |
| Diode Reverse Recovery Time | trr | VCE = 400V IF= 20A Rg=15 | - | 110 | - | ns |
| Diode peak Reverse Recovery Current | IRR | - | 16.6 | - | A | |
| Diode Reverse Recovery Charge | Qrr | - | 736 | - | nC | |
2509021810_JIAENSEMI-JNG20T65PS1_C51484249.pdf
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