Jilin Sino Microelectronics JCS15N60FH N channel MOSFET with RoHS compliance and 600V voltage rating
Key Attributes
Model Number:
JCS15N60FH
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
520mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 N-channel
Output Capacitance(Coss):
650pF
Input Capacitance(Ciss):
2.92nF
Pd - Power Dissipation:
53W
Gate Charge(Qg):
35.7nC@480V
Mfr. Part #:
JCS15N60FH
Package:
TO-220F-3
Product Description
N-CHANNEL MOSFET JCS15N60H
The JCS15N60H is a high-performance N-channel enhancement mode MOSFET designed for various power applications. It features low gate charge, low Crss, fast switching speed, and improved dv/dt capability. This product is 100% avalanche tested and RoHS compliant, making it suitable for high efficiency switch mode power supplies, electronic lamp ballasts, and UPS systems.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rds(on)-max (Vgs=10V) | Qg (nC) |
| JCS15N60CH-C-B / JCS15N60CH-C-BR | N/A | TO-220C | 15 | 600 | 0.52 (MAX) | 35.7 |
| JCS15N60FH-F-B / JCS15N60FH-F-BR | N/A | TO-220MF | 15 | 600 | 0.52 (MAX) | 35.7 |
| JCS15N60FH-F2-B / JCS15N60FH-F2-BR | N/A | TO-220MF-K2 | 15 | 600 | 0.52 (MAX) | 35.7 |
| JCS15N60FH-F4-B / JCS15N60FH-F4-BR | N/A | TO-220MF-K4 | 15 | 600 | 0.52 (MAX) | 35.7 |
| JCS15N60BH-B-B / JCS15N60BH-B-BR | N/A | TO-262 | 15 | 600 | 0.52 (MAX) | 35.7 |
| JCS15N60SH-S-B / JCS15N60SH-S-BR / JCS15N60SH-S-A / JCS15N60SH-S-AR | JCS15N60SH | TO-263 | 15 | 600 | 0.52 (MAX) | 35.7 |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit | Applicable Packages |
| Drain-Source Voltage | VDSS | 600 | V | All |
| Drain Current -continuous (Tj=25) | ID | 15* | A | All |
| Drain Current -continuous (Tj=100) | ID | 9.5* | A | All |
| Drain Current - pulse (note 1) | IDM | 60* | A | All |
| Gate-Source Voltage | VGSS | 30 | V | All |
| Single Pulsed Avalanche Energy (note 2) | EAS | 245 | mJ | All |
| Avalanche Current (note 1) | IAR | 15 | A | All |
| Repetitive Avalanche Current (note 1) | EAR | 23.9 | mJ | All |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 9.8 | V/ns | All |
| Power Dissipation (TC=25) | PD | 245 (JCS15N60CH/BH/SH), 53 (JCS15N60FH TO-220MF), 43.3 (JCS15N60FH TO-220MF-K2/K4) | W | All |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | All | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | All |
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 600 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.79 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=600V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=480V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 3.0 | - | 5.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=7.5A, 25 | 0.2 | 0.45 | 0.52 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=7.5A, 100 | 0.3 | 0.79 | 1.10 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=7.5A, 150 | 0.5 | 1.17 | 1.70 | |
| Forward Transconductance | gfs | VDS = 40V, ID=7.5Anote 4 | - | 12.3 | - | S |
| Gate resistance | Rg | F=1.0MHZ open drain | - | 0.3 | 3.2 | |
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 1000 | 2920 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 125 | 650 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 2.5 | 30 | pF |
| Turn-On delay time | td(on) | VDD=250V,ID=15A,RG=25 note 45 | - | 34 | 158 | ns |
| Turn-On rise time | tr | VDD=250V,ID=15A,RG=25 note 45 | - | 34 | 150 | ns |
| Turn-Off delay time | td(off) | VDD=250V,ID=15A,RG=25 note 45 | - | 70 | 345 | ns |
| Turn-Off Fall time | tf | VDD=250V,ID=15A,RG=25 note 45 | - | 20 | 100 | ns |
| MOFET dv/dt ruggedness | dv/dt | VDS=0 to 400V, ID=7.5A | - | 25 | - | V/ ns |
| Total Gate Charge | Qg | VDS =480V , ID=15A VGS =10V note 45 | - | 10 | 60.0 | nC |
| Gate-Source charge | Qgs | VDS =480V , ID=15A VGS =10V note 45 | - | 4 | 28.0 | nC |
| Gate-Drain charge | Qgd | VDS =480V , ID=15A VGS =10V note 45 | - | 3 | 20.0 | nC |
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 15 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 60 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=15A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=15A dIF/dt=100A/s (note 4) | - | 250 | 1000 | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=15A dIF/dt=100A/s (note 4) | - | 2.5 | 16.0 | C |
Thermal Characteristics
| Parameter | Symbol | JCS15N60CH/ BH/SH | JCS15N60FH TO-220MF | JCS15N60FH TO-220MF- K2/K4 | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.51 | 2.36 | 2.89 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | 62.5 | 67.1 | /W |
2411201841_Jilin-Sino-Microelectronics-JCS15N60FH_C2693276.pdf
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