switch mode power supply MOSFET Jilin Sino Microelectronics JCS640F for electronic lamp ballasts and UPS
Key Attributes
Model Number:
JCS640F
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
180mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
-
Output Capacitance(Coss):
245pF
Input Capacitance(Ciss):
1.76nF
Pd - Power Dissipation:
44W
Gate Charge(Qg):
62nC@160V
Mfr. Part #:
JCS640F
Package:
TO-220MF
Product Description
Product Overview
The JCS640 is a N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and UPS systems. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: JCS
- Certifications: RoHS
Technical Specifications
| Order Code | Package | Marking | Main Characteristics | Applications |
| JCS640S-S-B / JCS640S-S-BR / JCS640S-S-A / JCS640S-S-AR | TO-263 | JCS640S | ID: 18.0A, VDSS: 200V, Rdson-max (@Vgs=10V): 0.18, Qg-typ: 47nC | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, UPS |
| JCS640C-C-B / JCS640C-C-BR | TO-220C | N/A | ID: 18.0A, VDSS: 200V, Rdson-max (@Vgs=10V): 0.18, Qg-typ: 47nC | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, UPS |
| JCS640F-F-B / JCS640F-F-BR | TO-220MF | N/A | ID: 18.0A, VDSS: 200V, Rdson-max (@Vgs=10V): 0.18, Qg-typ: 47nC | High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, UPS |
Absolute Maximum Ratings
| Parameter | Symbol | JCS640C | JCS640S | JCS640F | Unit |
| Drain-Source Voltage | VDSS | 200 | 200 | 200 | V |
| Drain Current -continuous (Tc=25) | ID | 18.0* | 18.0* | 18.0* | A |
| Drain Current -continuous (Tc=100) | ID | 11.4* | 11.4* | 11.4* | A |
| Drain Current -pulse (note 1) | IDM | 72* | 72* | 72* | A |
| Gate-Source Voltage | VGSS | 30 | 30 | 30 | V |
| Single Pulsed Avalanche Energy (note 2) | EAS | 421 | 421 | 421 | mJ |
| Avalanche Current (note 1) | IAR | 18 | 18 | 18 | A |
| Repetitive Avalanche Current (note 1) | EAR | 14 | 14 | 4.4 | mJ |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 5.5 | 5.5 | 5.5 | V/ns |
| Power Dissipation (Tc=25) | PD | 140 | 140 | 44 | W |
| Power Dissipation (-Derate above 25) | PD | 1.12 | 1.12 | 0.35 | W/ |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | -55+150 | -55+150 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | 300 | 300 |
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 200 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS /TJ | ID=250A, referenced to 25 | - | 0.2 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=200V, VGS=0V, TC=25 | - | - | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=160V, TC=125 | - | - | 10 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=9.0A | - | 0.15 | 0.18 | |
| Forward Transconductance | gfs | VDS = 40V , ID=9.0Anote 4 | - | 13.5 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | - | - | 1330 | 1760 | pF |
| Output capacitance | Coss | - | - | 181 | 245 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHZ | - | 48 | 65 | pF |
Thermal Characteristics
| Parameter | Symbol | JCS640C/S | JCS640F | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.89 | 2.85 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | 62.5 | /W |
Switching Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Turn-On delay time | td(on) | VDD=100V,ID=18A,RG=25 VGS =10V note 45 | - | 54 | 70 | ns |
| Turn-On rise time | td(on) | VDD=100V,ID=18A,RG=25 VGS =10V note 45 | - | 104 | 162 | ns |
| Turn-Off delay time | td(off) | VDD=100V,ID=18A,RG=25 VGS =10V note 45 | - | 327 | 395 | ns |
| Turn-Off Fall time | tf | VDD=100V,ID=18A,RG=25 VGS =10V note 45 | - | 107 | 145 | ns |
| Total Gate Charge | Qg | VDS =160V , ID=18A VGS =10Vnote 45 | - | 47 | 62 | nC |
| Gate-Source charge | Qgs | VDS =160V , ID=18A VGS =10Vnote 45 | - | 8 | - | nC |
| Gate-Drain charge | Qgd | VDS =160V , ID=18A VGS =10Vnote 45 | - | 22 | - | nC |
Drain-Source Diode Characteristics and Maximum Ratings
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Maximum Continuous Drain-Source Diode Forward Current | IS | - | - | 18 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 72 | A | |
| Maximum Continuous Drain-Source Diode Forward Current | VSD | VGS=0V, IS=18A | - | 1.48 | - | V |
| Reverse recovery time | trr | - | - | - | 195 | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=18A dIF/dt=100A/s (note 4) | - | 1.48 | - | C |
2411201841_Jilin-Sino-Microelectronics-JCS640F_C2693266.pdf
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