Power semiconductor JIAENSEMI JNG50T120QMU2 optimized for UPS motor drives and portable power station
Key Attributes
Model Number:
JNG50T120QMU2
Product Custom Attributes
Pd - Power Dissipation:
833W
Td(off):
190ns
Td(on):
44ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
55pF
Input Capacitance(Cies):
8.408nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.93V@250uA
Pulsed Current- Forward(Ifm):
100A
Output Capacitance(Coes):
197pF
Reverse Recovery Time(trr):
94ns
Switching Energy(Eoff):
3.73mJ
Turn-On Energy (Eon):
2.57mJ
Mfr. Part #:
JNG50T120QMU2
Package:
TO-247-3LPlus
Product Description
Product Overview
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as UPS, Motor drives, PFC, Portable power station, and other soft switching applications.
Product Attributes
- Brand: JIAEN
- Certifications: Halogen Free and Green Devices Available
Technical Specifications
| Parameter | Value | Units | Conditions |
| VCES | 1200 | V | |
| VGES | + 30 | V | |
| IC (TC=25 ) | 100 | A | Continuous Collector Current |
| IC (TC=100) | 50 | A | Continuous Collector Current |
| ICM | 200 | A | Pulsed Collector Current (Note 1) |
| IF (TC=100 ) | 50 | A | Diode Continuous Forward Current |
| IFM | 100 | A | Diode Maximum Forward Current (Note 1) |
| tsc | 8 | us | Short Circuit Withstand Time |
| PD (TC=25 ) | 833 | W | Maximum Power Dissipation |
| TJ | -55 to +175 | Operating Junction Temperature Range | |
| Rth j-c (IGBT) | 0.18 | / W | Thermal Resistance, Junction to case |
| Rth j-c (Diode) | 0.37 | / W | Thermal Resistance, Junction to case |
| Rth j-a | 40 | / W | Thermal Resistance, Junction to Ambient |
| BVCES | 1200 | V | VGE= 0V, IC= 1mA |
| ICES | - | 10 uA | VCE= 1200V, VGE= 0V |
| IGES | - | + 200 nA | VGE= + 20V, VCE= 0V |
| VGE(th) | 4.93 - 6.93 | V | VGE= VCE, IC= 250uA |
| VCE(sat) | - | 1.55 V | VGE=15V, IC= 50A |
| Qg | - | 291 nC | VCC=960V VGE=15V IC=50A |
| Qge | - | 81 nC | |
| Qgc | - | 110 nC | |
| td(on) | - | 44 ns | VCC=600V VGE=15V IC=50A RG=5 Inductive Load TC=25 |
| tr | - | 95 ns | |
| td(off) | - | 190 ns | |
| tf | - | 264 ns | |
| Eon | - | 2.57 mJ | |
| Eoff | - | 3.73 mJ | |
| Ets | - | 6.31 mJ | |
| Cies | - | 8408 pF | VCE=25V VGE=0V f = 1MHz |
| Coes | - | 197 pF | |
| Cres | - | 55 pF | |
| VF | - | 2.0 - 3.5 V | IF=50A (Diode) |
| trr | - | 94 ns | VCE = 600V IF= 50A DiF/dt = 200A/us (Diode) |
| Irr | - | 9.7 A | (Diode) |
| Qrr | - | 225 nC | (Diode) |
2509021810_JIAENSEMI-JNG50T120QMU2_C51484275.pdf
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