Trench IGBT JIAENSEMI JNG25T65KS1 25A 650V Featuring Soft Current Turn Off for Inverter Applications
Key Attributes
Model Number:
JNG25T65KS1
Product Custom Attributes
Td(off):
75ns
Pd - Power Dissipation:
138.9W
Td(on):
22ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
8pF
Input Capacitance(Cies):
978pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@250uA
Operating Temperature:
-55℃~+150℃
Pulsed Current- Forward(Ifm):
75A
Output Capacitance(Coes):
90pF
Reverse Recovery Time(trr):
60ns
Switching Energy(Eoff):
490uJ
Turn-On Energy (Eon):
660uJ
Mfr. Part #:
JNG25T65KS1
Package:
TO-263
Product Description
Product Overview
The JIAEN JNG25T65KS1 is a Trench IGBT designed for lower losses and higher energy efficiency. It features 650V, 25A ratings, high-speed switching, soft current turn-off waveforms, and a square RBSOA. This IGBT is suitable for applications such as motor control, general inverters, and other soft switching applications.
Product Attributes
- Brand: JIAEN
- Model: JNG25T65KS1
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| Collector-Emitter Voltage | VCES | 650 | V | |||
| Gate-Emitter Voltage | VGES | +30 | V | |||
| Continuous Collector Current | IC | TC=25 | 50 | A | ||
| Continuous Collector Current | IC | TC=100 | 25 | A | ||
| Pulsed Collector Current | ICM | (Note 1) | 75 | A | ||
| Diode Continuous Forward Current | IF | TC=100 | 25 | A | ||
| Diode Maximum Forward Current | IFM | (Note 1) | 75 | A | ||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Maximum Power Dissipation | PD | TC=25 | 138.9 | W | ||
| Maximum Power Dissipation | PD | TC=100 | 55.6 | W | ||
| Operating Junction Temperature Range | TJ | -55 | +150 | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to case for IGBT | Rth j-c | 0.9 | / W | |||
| Thermal Resistance, Junction to case for Diode | Rth j-c | 1.2 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 65 | / W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 250uA | 650 | - | - | V |
| Collector-Emitter Leakage Current | ICES | VCE= 650V, VGE= 0V | - | - | 100 | uA |
| Gate Leakage Current, Forward | IGES | VGE=20V, VCE= 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC= 250uA | 5.1 | - | 6.9 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 25A | - | 2.1 | 2.7 | V |
| Total Gate Charge | Qg | VCC=480V VGE=15V IC=25A | - | 31.2 | - | nC |
| Gate-Emitter Charge | Qge | - | 7.7 | - | nC | |
| Gate-Collector Charge | Qgc | - | 13.3 | - | nC | |
| Turn-on Delay Time | td(on) | VCC=400V VGE=15V IC=25A RG=15 Inductive Load TC=25 | - | 22 | - | ns |
| Turn-on Rise Time | tr | - | 44 | - | ns | |
| Turn-off Delay Time | td(off) | - | 75 | - | ns | |
| Turn-off Fall Time | tf | - | 88 | - | ns | |
| Turn-on Switching Loss | Eon | - | 0.66 | - | mJ | |
| Turn-off Switching Loss | Eoff | - | 0.49 | - | mJ | |
| Total Switching Loss | Ets | - | 1.15 | - | mJ | |
| Input Capacitance | Cies | VCE=25V VGE=0V f = 1MHz | - | 978 | - | pF |
| Output Capacitance | Coes | - | 90 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 8 | - | pF | |
| Electrical Characteristics of Diode (TC=25 unless otherwise noted ) | ||||||
| Diode Forward Voltage | VF | IF=25A | - | 1.65 | 3.0 | V |
| Diode Reverse Recovery Time | trr | VCE = 400V IF= 25A Rg=15 | - | 60 | - | ns |
| Diode peak Reverse Recovery Current | IRR | - | 15.6 | - | A | |
| Diode Reverse Recovery Charge | Qrr | - | 518 | - | nC | |
2509021810_JIAENSEMI-JNG25T65KS1_C51484251.pdf
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