Jilin Sino Microelectronics JCS4N65RC N channel MOSFET with low gate charge and high switching speed
Key Attributes
Model Number:
JCS4N65RC
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.6Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
100pF
Input Capacitance(Ciss):
810pF
Pd - Power Dissipation:
122W
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
JCS4N65RC
Package:
DPAK
Product Description
Product Description
The JCS4N65C is a high-performance N-channel Power MOSFET designed for high-frequency switching applications. It offers low gate charge, low Crss, fast switching speeds, and improved dv/dt capability. The product is 100% avalanche tested and RoHS compliant.
Applications
- High frequency switching mode power supply
- Electronic ballast
- LED power supply
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | VDSS (V) | ID (A) @ T=25 | ID (A) @ T=100 | RDS(ON) () Typ @ VGS=10V | Qg-typ (nC) | EAS (mJ) |
| JCS4N65VC-V-BR | JCS4N65V | IPAK | 650 | 4.0 | 3.2 | 2.1 | 14 | 256 |
| JCS4N65RC-R-BR | JCS4N65R | DPAK | 650 | 4.0 | 3.2 | 2.1 | 14 | 256 |
| JCS4N65CC-C-BR | JCS4N65C | TO-220C | 650 | 4.0 | 3.2 | 2.1 | 14 | 256 |
| JCS4N65FC-F-BR | JCS4N65F | TO-220MF | 650 | 4.0 | 3.2 | 2.1 | 14 | 256 |
| JCS4N65FC-F2-BR | JCS4N65F | TO-220MF-K2 | 650 | 4.0 | 3.2 | 2.1 | 14 | 256 |
| JCS4N65FC-F4-BR | JCS4N65F | TO-220MF-K4 | 650 | 4.0 | 3.2 | 2.1 | 14 | 256 |
| JCS4N65BC-B-BR | JCS4N65B | TO-262 | 650 | 4.0 | 3.2 | 2.1 | 14 | 256 |
| JCS4N65MC-M-BR | JCS4N65M | TO-126-K1 | 650 | 4.0 | 3.2 | 2.1 | 14 | 256 |
| JCS4N65MFC-MF-BR | JCS4N65MF | TO-126F | 650 | 4.0 | 3.2 | 2.1 | 14 | 256 |
2411201841_Jilin-Sino-Microelectronics-JCS4N65RC_C2693250.pdf
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