Jilin Sino Microelectronics 3DD4244DM high voltage NPN transistor for in power amplifier and ballast circuits
Key Attributes
Model Number:
3DD4244DM
Product Custom Attributes
Emitter-Base Voltage(Vebo):
9V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
60W
Transition Frequency(fT):
-
Type:
NPN
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-
Mfr. Part #:
3DD4244DM
Package:
TO-126
Product Description
Product Overview
The 3DD4244D is a high voltage, fast-switching NPN power transistor designed for various power electronics applications. It offers high breakdown voltage, high current capability, and high switching speed, making it suitable for energy-saving lamps, electronic ballasts, high-frequency switching power supplies, high-frequency power transformers, and general power amplifier circuits. This product is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Parameter | Symbol | Value | Unit | Tests conditions | Min | Typ | Max |
| ABSOLUTE RATINGS | |||||||
| Collector-Emitter Voltage (VBE=0) | VCES | 700 | V | ||||
| Collector-Emitter Voltage (IB=0) | VCEO | 400 | V | ||||
| Emitter-Base Voltage | VEBO | 9.0 | V | ||||
| Collector Current (DC) | IC | 3.0 | A | ||||
| Collector Current (pulse) | ICP | 6.0 | A | ||||
| Base Current (DC) | IB | 1.0 | A | ||||
| Base Current (pulse) | IBP | 2.0 | A | ||||
| Total Dissipation (TO-126S/IPAK /DPAK) | PC | 30 | W | ||||
| Total Dissipation (TO-220) | PC | 60 | W | ||||
| Junction Temperature | Tj | 150 | |||||
| Storage Temperature | Tstg | -55~+150 | |||||
| Thermal Resistance Junction Case (TO-126S/ IPAK/DPAK) | Rth(j-c) | 4.17 | /W | ||||
| Thermal Resistance Junction Case (TO-220) | Rth(j-c) | 2.08 | /W | ||||
| ELECTRICAL CHARACTERISTICS | |||||||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 400 | V | Ic=10mA,IB=0 | 400 | 460 | |
| Collector-Base Breakdown Voltage | V(BR)CBO | 700 | V | Ic=1mA,IE=0 | 700 | 800 | |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 9.0 | V | IE=1mA,Ic=0 | 9 | 16 | |
| Collector Cut-off Current | ICBO | A | VCB=600V, IE=0 | 5 | |||
| Collector Cut-off Current | ICEO | A | VCE=400V,IB=0 | 10 | |||
| Emitter Cut-off Current | IEBO | A | VEB=9V, IC=0 | 5 | |||
| DC Current Gain | hFE | VCE=5V, IC=500mA | 10 | 20 | 30 | ||
| DC Current Gain | hFE | VCE=5V, IC=2.0A | 6 | 12 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | V | IC=1.5A, IB=0.5A | 0.3 | 1.5 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | V | IC=1.0A, IB=0.25A | 1.0 | 1.2 | ||
| Switching Time | ts | S | IC=0.5A | 2.0 | 3.5 | ||
2409280130_Jilin-Sino-Microelectronics-3DD4244DM_C272488.pdf
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