Jilin Sino Microelectronics JCS6N70FH TO 220MF MOSFET for UPS and switching power supply applications
Key Attributes
Model Number:
JCS6N70FH TO-220MF
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.6Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 N-channel
Output Capacitance(Coss):
170pF
Input Capacitance(Ciss):
1.89nF
Pd - Power Dissipation:
40W
Gate Charge(Qg):
41nC@10V
Mfr. Part #:
JCS6N70FH TO-220MF
Package:
TO-220F-3
Product Description
Product Overview
The JCS6N70FH is an N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and UPS applications. It features low gate charge, low Crss (typical 14pF), fast switching speed, 100% avalanche tested, and improved dv/dt capability, making it a RoHS compliant product.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Origin: China
- Certifications: RoHS
- Halogen Free: No
Technical Specifications
| Order Code | Marking | Package | Device Weight | ID | VDSS | Rdson-max (@Vgs=10V) | Qg-typ |
| JCS6N70FH-O-F-N-B | JCS6N70F | TO-220MF | 2.20 g(typ) | 6.0 A | 700 V | 1.6 | 31 nC |
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 700 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.73 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=700V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=560V, TC=125 | - | - | 100 | A |
| Gate-Body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-Body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=3.0A | - | 1.26 | 1.6 | |
| Forward Transconductance | gfs | VDS = 40V, ID=6.0Anote 4 | - | 4.9 | - | S |
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 1620 | 1890 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 125 | 170 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 14 | 20 | pF |
| Turn-On delay time | td(on) | VDD=350V,ID=6A,RG=25 note 45 | - | 11 | 31 | ns |
| Turn-On rise time | tr | VDD=350V,ID=6A,RG=25 note 45 | - | 35 | 80 | ns |
| Turn-Off delay time | td(off) | VDD=350V,ID=6A,RG=25 note 45 | - | 46 | 95 | ns |
| Turn-Off Fall time | tf | VDD=350V,ID=6A,RG=25 note 45 | - | 40 | 92 | ns |
| Total Gate Charge | Qg | VDS =560V , ID=6A VGS =10V note 45 | - | 31 | 41 | nC |
| Gate-Source charge | Qgs | VDS =560V , ID=6A VGS =10V note 45 | - | 6 | - | nC |
| Gate-Drain charge | Qgd | VDS =560V , ID=6A VGS =10V note 45 | - | 15 | - | nC |
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | - | 6 | A |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | - | 24 | A |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=6.0A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=6.0A dIF/dt=100A/s (note 4) | - | 345 | - | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=6.0A dIF/dt=100A/s (note 4) | - | 3.2 | - | C |
| Thermal Resistance, Junction to Case | Rth(j-c) | - | - | - | 3.2 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | - | - | - | 62.5 | /W |
2411201840_Jilin-Sino-Microelectronics-JCS6N70FH-TO-220MF_C272601.pdf
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