Power transistor with middling voltage Jilin Sino-Microelectronics 3DD4128PL fast switching NPN device
Key Attributes
Model Number:
3DD4128PL
Product Custom Attributes
Current - Collector Cutoff:
100uA
Emitter-Base Voltage(Vebo):
7V
Pd - Power Dissipation:
75W
Transition Frequency(fT):
4MHz
Current - Collector(Ic):
5A
Collector - Emitter Voltage VCEO:
200V
Mfr. Part #:
3DD4128PL
Package:
TO-220
Product Description
MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
The 3DD4128PL is a high-reliability NPN power transistor designed for applications requiring middling breakdown voltage, high current capability, and fast switching speeds. It is suitable for energy-saving lights, electronic ballasts, electronic transformers, and general power amplifier circuits. This RoHS-compliant product offers environmental advantages.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS (implied by "RoHS" and "RoHS product")
- Halogen Free: No
Technical Specifications
| Order Code | Marking | Package | Packaging | IC (A) | VCEO (V) | PC (TO-126) (W) | PC (TO-220) (W) | Thermal Resistance (TO-126) (/W) | Thermal Resistance (TO-220) (/W) |
| 3DD4128PL-O-M-N-C | 4128PL | TO-126 | Bag | 5 | 200 | 40 | - | 3.125 | - |
| 3DD4128PL-O-Z-N-C | D4128PL | TO-220 | Bag | 5 | 200 | - | 75 | - | 1.67 |
Electrical Characteristics
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Emitter Voltage (VBE=0) | VCES | - | 350 | - | - | V |
| Collector-Emitter Voltage (IB=0) | VCEO | - | 200 | - | - | V |
| Emitter-Base Voltage | VEBO | - | 7 | - | - | V |
| Collector Current (DC) | IC | - | 5 | - | - | A |
| Collector Current (pulse) | ICP | - | 10 | - | - | A |
| Base Current (DC) | IB | - | 2 | - | - | A |
| Base Current (pulse) | IBP | - | 4 | - | - | A |
| Breakdown Voltage CEO | V(BR)CEO | IC=10mA,IB=0 | 200 | - | - | V |
| Breakdown Voltage CBO | V(BR)CBO | IC=1mA,IB=0 | 350 | - | - | V |
| Breakdown Voltage EBO | V(BR)EBO | IE=1mA,IC=0 | 7 | - | - | V |
| Collector Cut-off Current | ICBO | VCB=350V, IE=0 | - | - | 100 | A |
| Collector Cut-off Current | ICEO | VCE=200V,IB=0 | - | - | 50 | A |
| Emitter Cut-off Current | IEBO | VEB=7V, IC=0 | - | - | 10 | A |
| DC Current Gain | Hfe(1) | VCE =5V, IC=0.8A | 8 | - | 50 | - |
| DC Current Gain | Hfe(2) | VCE =5V, IC=3A | 8 | - | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat)(1) | IC=1A, IB=0.2A | - | - | 0.8 | V |
| Collector-Emitter Saturation Voltage | VCE(sat)(2) | IC=3A, IB=0.6A | - | - | 1.5 | V |
| Base-Emitter Saturation Voltage | VBE(sat) | IC=3A, IB=0.6A | - | - | 1.6 | V |
| Fall Time | tf | - | - | - | 0.7 | S |
| Storage Time | ts | VCC=24V IC=0.5A,IB1=-IB2=0.1A | - | - | 4 | S |
| Transition Frequency | fT | VCE=10V, IC=0.5A | 4 | - | - | MHz |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| Thermal Resistance Junction Case TO-126 | Rth(j-c) | 3.125 | /W |
| Thermal Resistance Junction Case TO-220 | Rth(j-c) | 1.67 | /W |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Total Dissipation (TO-126) | PC | 40 | W |
| Total Dissipation (TO-220) | PC | 75 | W |
| Junction Temperature | Tj | 150 | |
| Storage Temperature | Tstg | -55~+150 |
2409271302_Jilin-Sino-Microelectronics-3DD4128PL_C3020064.pdf
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