Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency switching power supplies
Key Attributes
Model Number:
3DD13003A-126
Product Custom Attributes
Current - Collector Cutoff:
100uA
Pd - Power Dissipation:
40W
Transition Frequency(fT):
4MHz
Type:
NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
450V
Operating Temperature:
-
Mfr. Part #:
3DD13003A-126
Package:
TO-126
Product Description
Product Overview
The 3DD13003A is a high voltage, fast-switching NPN power transistor designed for various electronic applications including chargers, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, while being a RoHS-compliant product.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Parameter | Symbol | Value | Unit | Tests conditions | Min | Typ | Max |
| Collector-Emitter Voltage (VBE=0) | VCES | 700 | V | ||||
| Collector-Emitter Voltage (IB=0) | VCEO | 450 | V | ||||
| Emitter-Base Voltage | VEBO | 9 | V | ||||
| Collector Current (DC) | IC | 1.5 | A | ||||
| Collector Current (pulse) | ICP | 3.0 | A | ||||
| Total Dissipation (TO-92-FJ/TO-92-FJ-F1) | PC | 1 | W | ||||
| Total Dissipation (DPAK/IPAK) | PC | 10 | W | ||||
| Total Dissipation (@TO-126/TO-126-FJ) | PC | 20 | W | ||||
| Total Dissipation (TO-220) | PC | 40 | W | ||||
| Junction Temperature | Tj | 150 | |||||
| Storage Temperature | Tstg | -55~+150 | |||||
| Breakdown Voltage Collector-Emitter | V(BR)CEO | 450 | V | IC=10mA,IB=0 | 450 | 500 | |
| Breakdown Voltage Collector-Base | V(BR)CBO | 700 | V | IC=1mA,IE=0 | 700 | 830 | |
| Breakdown Voltage Emitter-Base | V(BR)EBO | 9 | V | IE=1mA,IC=0 | 9 | 13 | |
| Collector Cut-off Current | ICBO | 100 | A | VCB=700V, IE=0 | 100 | ||
| Collector Cut-off Current | ICEO | 50 | A | VCE=450V,IB=0 | 50 | ||
| Emitter Cut-off Current | IEBO | 10 | A | VEB=7V, IC=0 | 10 | ||
| DC Current Gain | hFE | 6-40 | VCE=5V, IC=5mA | 6 | 20 | 40 | |
| DC Current Gain | hFE | 8-40 | VCE=10V, IC=200mA | 8 | 25 | 40 | |
| DC Current Gain | hFE | 4-11 | VCE=5V, IC=1.5A | 4 | 11 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.8 | V | IC=0.5A, IB=0.1A | 0.15 | 0.8 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 2.0 | V | IC=1.5A, IB=0.5A | 0.5 | 2.0 | |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.8 | V | IC=1.0A, IB=0.25A | 0.6 | 1.8 | |
| Fall Time | tf | 0.7 | S | VCC=24V IC=0.5A,IB1=-IB2=0.1A | 0.7 | ||
| Storage Time | ts | 4 | S | VCC=24V IC=0.5A,IB1=-IB2=0.1A | 4 | ||
| Transition Frequency | fT | 4 | MHz | VCE=10V, Ic=0.2A | 4 | ||
| Thermal Resistance Junction Ambient (TO-92-FJ/TO-92-FJ-F1) | Rth(j-a) | 125 | /W | ||||
| Thermal Resistance Junction Case (TO-92-FJ/TO-92-FJ-F1) | Rth(j-c) | 49 | /W | ||||
| Thermal Resistance Junction Case (DPAK/IPAK) | Rth(j-c) | 12.5 | /W | ||||
| Thermal Resistance Junction Case (TO-126) | Rth(j-c) | 6.25 | /W | ||||
| Thermal Resistance Junction Case (TO-220) | Rth(j-c) | 3.125 | /W |
2411201843_Jilin-Sino-Microelectronics-3DD13003A-126_C272474.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
