Jilin Sino Microelectronics JCS20N65WH 3P transistor with improved dv dt capability and RoHS compliance
Key Attributes
Model Number:
JCS20N65WH-3P
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
500mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Number:
1 N-channel
Output Capacitance(Coss):
250pF
Input Capacitance(Ciss):
4nF
Pd - Power Dissipation:
500W
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
JCS20N65WH-3P
Package:
TO-247-3
Product Description
Product Overview
The JCS20N65H is an N-channel enhancement mode field-effect transistor designed for high-frequency switching power supplies, electronic ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rds(on)-max (@Vgs=10V) () | Qg-typ (nC) |
| JCS20N65FH-F-B JCS20N65FH-F-BR | N/A | TO-220MF | 20 | 650 | 0.5 | 45 |
| JCS20N65WH-GE-B JCS20N65WH-GE-BR | N/A | TO-247 | 20 | 650 | 0.5 | 45 |
Absolute Maximum Ratings (Tc=25)
| Parameter | Symbol | Value (JCS20N65WH/JCS20N65FH) | Unit |
| Drain-Source Voltage | VDSS | 650 | V |
| Continuous Drain Current | ID (T=25) | 20 | A |
| Continuous Drain Current | ID (T=100) | 12.5 | A |
| Drain Current pulsenote 1 | IDM | 80 | A |
| Gate-Source Voltage | VGSS | 30 | V |
| Single Pulsed Avalanche Energynote 2 | EAS | 108 | mJ |
| Avalanche Currentnote 1 | IAR | 20 | A |
| Repetitive Avalanche Energy note 1 | EAR | 20.7 | mJ |
| Peak Diode Recovery dv/dtnote 3 | dv/dt | 50 | V/ns |
| Power Dissipation (TC=25) | PD | 500 | W |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 |
Electrical Characteristics (Tc=25 unless otherwise specified)
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Off-Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 650 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=650V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=520V, TC=125 | - | - | 100 | A |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 3.0 | - | 5.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=10A | - | 0.44 | 0.5 | |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 2550 | 4000 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 250 | - | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 11 | - | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=300V,ID=20A,RG=25 note 45 | - | 56 | 128 | ns |
| Turn-On rise time | tr | VDD=300V,ID=20A,RG=25 note 45 | - | 140 | 270 | ns |
| Turn-Off delay time | td(off) | VDD=300V,ID=20A,RG=25 note 45 | - | 80 | 350 | ns |
| Turn-Off Fall time | tf | VDD=300V,ID=20A,RG=25 note 45 | - | 50 | 120 | ns |
| Total Gate Charge | Qg | VDS =520V , ID=20A VGS =10V note 45 | - | 45 | 80 | nC |
| Gate-Source charge | Qgs | VDS =520V , ID=20A VGS =10V note 45 | - | 15.0 | - | nC |
| Gate-Drain charge | Qgd | VDS =520V , ID=20A VGS =10V note 45 | - | 17 | - | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 20 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 80 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=20A | - | - | 1.45 | V |
| Reverse recovery time | trr | VGS=0V, IS=20A dIF/dt=100A/s (note 4) | - | 660 | - | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=20A dIF/dt=100A/s (note 4) | - | 9.3 | - | C |
Thermal Characteristics
| Parameter | Symbol | Value (JCS20N65WH) | Value (JCS20N65FH) | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.25 | 2.01 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 29.8 | 39.7 | /W |
2411201842_Jilin-Sino-Microelectronics-JCS20N65WH-3P_C272566.pdf
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