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quality NPN transistor Jilin Sino Microelectronics 3DD4243DY designed for high frequency switching power supplies factory
quality NPN transistor Jilin Sino Microelectronics 3DD4243DY designed for high frequency switching power supplies factory

NPN transistor Jilin Sino Microelectronics 3DD4243DY designed for high frequency switching power supplies

Key Attributes
Model Number: 3DD4243DY
Product Custom Attributes
Emitter-Base Voltage(Vebo):
9V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
40W
Transition Frequency(fT):
4MHz
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
400V
Mfr. Part #:
3DD4243DY
Package:
TO-92-3
Product Description

Product Overview

The 3DD4243D is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, high-frequency power transformers, and general power amplifier circuits. This product is RoHS compliant.

Product Attributes

  • Brand: Jilin Sino-microelectronics Co., Ltd.
  • Certifications: RoHS compliant, Halogen Free (No)
  • Origin: China

Technical Specifications

ModelPackageIC (A)VCEO (V)PC (TO-92) (W)PC (TO-251) (W)PC (TO-126(S)) (W)PC (TO-220) (W)Order CodeMarkingHalogen FreePackaging
3DD4243D(T/I/M/Z)TO-922.04001---3DD4243DT-O-T-B-A4243DTNOBrede
3DD4243D(T/I/M/Z)TO-922.04001---3DD4243DT-O-T-N-C4243DTNOBag
3DD4243D(T/I/M/Z)TO-2512.0400-10--3DD4243DI-O-I-N-B4243DINOTube
3DD4243D(T/I/M/Z)TO-2512.0400-10--3DD4243DI-O-I-N-C4243DINOBag
3DD4243D(T/I/M/Z)TO-1262.0400--20-3DD4243DM-O-M-N-B4243DMNOTube
3DD4243D(T/I/M/Z)TO-1262.0400--20-3DD4243DM-O-M-N-C4243DMNOBag
3DD4243D(T/I/M/Z)TO-126S2.0400--20-3DD4243DM-O-MS-B-B4243DMNOTube
3DD4243D(T/I/M/Z)TO-126S2.0400--20-3DD4243DM-O-MS-B-C4243DMNOBag
3DD4243D(T/I/M/Z)TO-2202.0400---403DD4243DZ-O-Z-N-C4243DZNOBag
3DD4243D(T/I/M/Z)TO-2202.0400---403DD4243DZ-O-Z-N-B4243DZNOTube
ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-Emitter Voltage (VBE=0)VCES---700V
Collector-Emitter Voltage (IB=0)VCEO---400V
Emitter-Base VoltageVEBO---9V
Collector Current (DC)IC---2.0A
Collector Current (pulse)ICP---4.0A
Collector-Emitter Breakdown VoltageV(BR)CEOIc=10mA,IB=0400460-V
Collector-Open Breakdown VoltageV(BR)CBOIc=1mA,IE=0700800-V
Emitter-Open Breakdown VoltageV(BR)EBOIE=1mA,Ic=0916-V
Collector Cut-off CurrentICBOVCB=700V, IE=0--5A
Emitter Cut-off CurrentIEBOVEB=9V, IC=0--5A
DC Current GainhFEVCE=5V, IC=200mA192225-
DC Current GainhFEVCE=5V, IC=2.0A48--
Collector-Emitter Saturation VoltageVCE(sat)IC=2.0A, IB=0.4A-0.81.1V
Base-Emitter Saturation VoltageVBE(sat)IC=1.0A, IB=0.2A-1.01.2V
Forward Transfer Current RatiofTVCE=10V, Ic=0.1A4--MHz
Switching Time (fall time)tf---0.7S
Switching Time (storage time)tsVCC=24V IC=0.25A,IB1=-IB2=0.05A--5S
PackageThermal ResistanceUnit
TO-92Rth(j-a)125/W
TO-251Rth(j-c)12.5/W
TO-126(S)Rth(j-c)6.25/W
TO-220Rth(j-c)3.125/W

2409271302_Jilin-Sino-Microelectronics-3DD4243DY_C3020068.pdf

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