Jilin Sino Microelectronics JCS6N90FH 220MF N channel MOSFET with improved dv dt and RoHS compliance
Key Attributes
Model Number:
JCS6N90FH-220MF
Product Custom Attributes
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3Ω@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
1 N-channel
Output Capacitance(Coss):
136pF
Pd - Power Dissipation:
58W
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
JCS6N90FH-220MF
Package:
TO-220F-3
Product Description
Product Overview
The JCS6N90H is a N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and UPS applications. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability. This RoHS compliant product is available in TO-220C, TO-220MF, and TO-262N packages.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rds(on)-max (@Vgs=10V) () | Qg-typ (nC) |
| JCS6N90CH-C-B | N/A | TO-220C | 6 | 900 | 3.0 | 14 |
| JCS6N90CH-C-BR | N/A | TO-220C | 6 | 900 | 3.0 | 14 |
| JCS6N90FH-F-B | N/A | TO-220MF | 6 | 900 | 3.0 | 14 |
| JCS6N90CH-F-BR | N/A | TO-220MF | 6 | 900 | 3.0 | 14 |
| JCS6N90B-BP-B | N/A | TO-262N | 6 | 900 | 3.0 | 14 |
| JCS6N90B-BP-BR | N/A | TO-262N | 6 | 900 | 3.0 | 14 |
Absolute Maximum Ratings
| Parameter | Symbol | Value (JCS6N90CH/B) | Value (JCS6N90FH) | Unit |
| Drain-Source Voltage | VDSS | 900 | 900 | V |
| Drain Current -continuous (T=25) | ID | 6* | 6* | A |
| Drain Current -continuous (T=100) | ID | 3.8* | 3.8* | A |
| Drain Current - pulse (note 1) | IDM | 24* | 24* | A |
| Gate-Source Voltage | VGSS | 30 | 30 | V |
| Single Pulsed Avalanche Energy (note 2) | EAS | 650 | 650 | mJ |
| Avalanche Current (note 1) | IAR | 6 | 6 | A |
| Repetitive Avalanche Current (note 1) | EAR | 16.7 | 16.7 | mJ |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 4.5 | 4.5 | V/ns |
| Power Dissipation (TC=25) | PD | 167 | 167 | W |
| Power Dissipation -Derate above 25 | PD | 1.43 | 1.43 | W/ |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | -55+150 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | 300 |
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 900 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 1.05 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=900V,VGS=0V, TC=25 | - | - | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=720V, TC=125 | - | - | 10 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 3.0 | - | 5.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=3.0A | - | 2.6 | 3.0 | |
| Forward Transconductance | gfs | VDS = 40V, ID=3.0Anote 4 | - | 5.6 | - | S |
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 1320 | 1716 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 105 | 136 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 9 | 12 | pF |
| Turn-On delay time | td(on) | VDD=450V,ID=6A,RG=25 note 45 | - | 34 | 75 | ns |
| Turn-On rise time | tr | VDD=450V,ID=6A,RG=25 note 45 | - | 85 | 155 | ns |
| Turn-Off delay time | td(off) | VDD=450V,ID=6A,RG=25 note 45 | - | 56 | 113 | ns |
| Turn-Off Fall time | tf | VDD=450V,ID=6A,RG=25 note 45 | - | 59 | 118 | ns |
| Total Gate Charge | Qg | VDS =720V , ID=6A VGS =10V note 45 | - | 14 | 19 | nC |
| Gate-Source charge | Qgs | VDS =720V , ID=6A VGS =10V note 45 | - | 5 | - | nC |
| Gate-Drain charge | Qgd | VDS =720V , ID=6A VGS =10V note 45 | - | 6 | - | nC |
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 6 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 24 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=6A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=6A dIF/dt=100A/s (note 4) | - | 625 | - | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=6A dIF/dt=100A/s (note 4) | - | 6.71 | - | C |
Thermal Characteristics
| Parameter | Symbol | Value (JCS6N90CH/B) | Value (JCS6N90FH) | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.78 | 2.3 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | 62.5 | /W |
2410121211_Jilin-Sino-Microelectronics-JCS6N90FH-220MF_C272541.pdf
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