transistor Jilin Sino Microelectronics 3DD4242DM 126 for power amplification and high frequency switching

Key Attributes
Model Number: 3DD4242DM-126
Product Custom Attributes
Emitter-Base Voltage(Vebo):
9V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
20W
Transition Frequency(fT):
4MHz
Type:
NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-
Mfr. Part #:
3DD4242DM-126
Package:
TO-126
Product Description

Product Overview

The 3DD4242D is a high-performance transistor designed for various power applications. It features high breakdown voltage, high current capability, and high switching speed, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This RoHS-compliant product offers high reliability and is available in multiple package types.

Product Attributes

  • Brand: Jilin Sino-microelectronics Co., Ltd
  • Certifications: RoHS

Technical Specifications

Order CodeMarkingPackageHalogen-ReelHalogen-Free-ReelHalogen-BagHalogen-Free-BagHalogen-TubeHalogen-Free-Tube
3DD4242D-NB-A4242DSOT-89
3DD4242D-NB-AR
3DD4242D-NB-C
3DD4242D-NB-CR
3DD4242D-T-A4242DTO-92
3DD4242D-T-AR
3DD4242D-T-C
3DD4242D-T-CR
3DD4242D-T1-A4242DTO-92-F1
3DD4242D-T1-AR
3DD4242D-T1-C
3DD4242D-T1-CR
3DD4242D-R-A4242DDPAKN/AN/A
3DD4242D-R-AR
3DD4242D-R-C
3DD4242D-R-CR
3DD4242D-V-C4242DIPAKN/AN/A
3DD4242D-V-CRN/AN/A
3DD4242D-V-BN/AN/A
3DD4242D-V-BRN/AN/A
3DD4242D-M-C4242DTO-126N/AN/A
3DD4242D-M-CRN/AN/A
3DD4242D-M-BN/AN/A
3DD4242D-M-BRN/AN/A
3DD4242D-M1-C4242DTO-126SN/AN/A
3DD4242D-M1-CRN/AN/A
3DD4242D-M1-BN/AN/A
3DD4242D-M1-BRN/AN/A
ParameterSymbolValueUnitTest ConditionsMinTypMax
MAIN CHARACTERISTICS
ICIC1.5A
VCEOVCEO400V
PC (TO-92/TO-92-F1/SOT-89)PC1W
PC (DPAK/IPAK)PC10W
PC (TO-126(S))PC20W
ABSOLUTE RATINGS
Collector- Emitter VoltageVBE=0VCES700V
Collector- Emitter VoltageIB=0VCEO400V
Emitter-Base VoltageVEBO9V
Collector CurrentDCIC1.5A
Collector CurrentpulseICP3.0A
Total Dissipation (TO-92/SOT-89)PC1W
Total Dissipation (DPAK/IPAK )PC10W
Total Dissipation (TO-126(S))PC20W
Junction TemperatureTj150
Storage TemperatureTstg-55~+150
ELECTRICAL CHARACTERISTIC
Collector-Emitter Breakdown VoltageV(BR)CEO400VIc=10mA,IB=0400470
Collector-Base Breakdown VoltageV(BR)CBO700VIc=1mA,IE=0700800
Emitter-Base Breakdown VoltageV(BR)EBO9VIE=1mA,Ic=0916
Collector Cut-off CurrentICBO5AVCB=700V, IE=05
Emitter Cut-off CurrentICEO10AVCE=400V,IB=010
Base Cut-off CurrentIEBO5AVEB=7V, IC=05
DC Current GainhFE19VCE=10V, IC=100mA192225
DC Current GainhFE3.0VCE=5V, IC=1.5A3.07.0
Collector-Emitter Saturation VoltageVCE(sat)0.2VIC=0.5A, IB=100mA0.20.8
Base-Emitter Saturation VoltageVBE(sat)0.9VIC=0.5A, IB=100mA0.91.2
Switching Timets1.0SIC=0.25A1.04.0
Transition FrequencyfT4MHzVCE=10V, Ic=0.1A4
THERMAL CHARACTERISTIC
Thermal Resistance Junction AmbientRth(j-a)125/WTO-92/ TO-92-F1/SOT-89125
Thermal Resistance Junction CaseRth(j-c)12.5/WDPAK/IPAK12.5
Thermal Resistance Junction CaseRth(j-c)6.25/WTO-126(S)6.25

2409280032_Jilin-Sino-Microelectronics-3DD4242DM-126_C272486.pdf

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