Electronic ballast and power supply transistor Jilin Sino Microelectronics JCS4N80RC N channel FET device
Key Attributes
Model Number:
JCS4N80RC
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.6Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Pd - Power Dissipation:
4W
Input Capacitance(Ciss):
880pF
Output Capacitance(Coss):
100pF
Gate Charge(Qg):
29.5nC@10V
Mfr. Part #:
JCS4N80RC
Package:
DPAK
Product Description
Product Overview
The JCS4N80C is a N-channel enhancement mode field-effect transistor designed for applications such as switched-mode power supplies and electronic ballasts. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | Main Characteristics (ID, VDSS, Rds(on)-max, Qg-typ) | Applications |
| JCS4N80VC-V-B JCS4N80VC-V-BR | N/A | IPAK | ID: 4A, VDSS: 800V, Rds(on)-max(@Vgs=10V): 2.6, Qg-typ: 29.5nC | Switched mode power supplies, Electronic ballast |
| JCS4N80RC-R-B JCS4N80RC-R-BR JCS4N80RC-R-A JCS4N80RC-R-AR | JCS4N80R | DPAK | ID: 4A, VDSS: 800V, Rds(on)-max(@Vgs=10V): 2.6, Qg-typ: 29.5nC | Switched mode power supplies, Electronic ballast |
| JCS4N80FC-F-B JCS4N80FC-F-BR | N/A | TO-220MF | ID: 4A, VDSS: 800V, Rds(on)-max(@Vgs=10V): 2.6, Qg-typ: 29.5nC | Switched mode power supplies, Electronic ballast |
| JCS4N80CC-C-B JCS4N80CC-C-BR | N/A | TO-220C | ID: 4A, VDSS: 800V, Rds(on)-max(@Vgs=10V): 2.6, Qg-typ: 29.5nC | Switched mode power supplies, Electronic ballast |
| JCS4N80BC-B-B JCS4N80BC-B-BR | N/A | TO-262 | ID: 4A, VDSS: 800V, Rds(on)-max(@Vgs=10V): 2.6, Qg-typ: 29.5nC | Switched mode power supplies, Electronic ballast |
| JCS4N80VC-V5-B JCS4N80VC-V5-BR | N/A | IPAK-WS2 | ID: 4A, VDSS: 800V, Rds(on)-max(@Vgs=10V): 2.6, Qg-typ: 29.5nC | Switched mode power supplies, Electronic ballast |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit | Applicable Models |
| Drain-Source Voltage | VDSS | 800 | V | JCS4N80CC/ BC, JCS4N80FC, JCS4N80VC/ RC |
| Drain Current -continuous (Tc=25) | ID | 4 | A | JCS4N80CC/ BC, JCS4N80FC, JCS4N80VC/ RC |
| Drain Current -continuous (Tc=100) | ID | 2.48 | A | JCS4N80CC/ BC, JCS4N80FC, JCS4N80VC/ RC |
| Drain Current -pulse (note 1) | IDM | 16 | A | JCS4N80CC/ BC, JCS4N80FC, JCS4N80VC/ RC |
| Gate-Source Voltage | VGSS | 30 | V | JCS4N80CC/ BC, JCS4N80FC, JCS4N80VC/ RC |
| Single Pulsed Avalanche Energy (note 2) | EAS | 470 | mJ | JCS4N80CC/ BC, JCS4N80FC, JCS4N80VC/ RC |
| Avalanche Current (note 1) | IAR | 4.0 | A | JCS4N80CC/ BC, JCS4N80FC, JCS4N80VC/ RC |
| Repetitive Avalanche Energy (note 1) | EAR | 13 | mJ | JCS4N80CC/ BC, JCS4N80FC, JCS4N80VC/ RC |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 4.0 | V/ns | JCS4N80CC/ BC, JCS4N80FC, JCS4N80VC/ RC |
| Power Dissipation (Tc=25) | PD | 99.2 | W | JCS4N80CC/ BC |
| Power Dissipation (Tc=25) | PD | 45.8 | W | JCS4N80FC |
| Power Dissipation (Tc=25) | PD | 38.2 | W | JCS4N80VC/ RC |
| Power Dissipation -Derate above 25 | - | 0.79 | W/ | JCS4N80CC/ BC |
| Power Dissipation -Derate above 25 | - | 0.37 | W/ | JCS4N80FC |
| Power Dissipation -Derate above 25 | - | 0.31 | W/ | JCS4N80VC/ RC |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | JCS4N80CC/ BC, JCS4N80FC, JCS4N80VC/ RC | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | JCS4N80CC/ BC, JCS4N80FC, JCS4N80VC/ RC |
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 800 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.95 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=800V,VGS=0V, TC=25 | - | - | 5 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=640V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.0A, 25 | - | 1.9 | 2.6 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.0A, 100 | - | 3.3 | 4.5 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.0A, 150 | - | 4.9 | 6.5 | |
| Forward Transconductance | gfs | VDS = 50V, ID=2.0Anote 4 | - | 3.8 | - | S |
| Dynamic Characteristics | ||||||
| Gate resistance | Rg | F=1.0MHZ open drain | - | 0.5 | 6.0 | |
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | 300 | 675 | 880 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 40 | 100 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 2.0 | 15 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=400V,ID=4A,RG=25 note 45 | - | 18 | 40 | ns |
| Turn-On rise time | tr | VDD=400V,ID=4A,RG=25 note 45 | - | 48 | 100 | ns |
| Turn-Off delay time | td(off) | VDD=400V,ID=4A,RG=25 note 45 | - | 39 | 80 | ns |
| Turn-Off Fall time | tf | VDD=400V,ID=4A,RG=25 note 45 | - | 38 | 80 | ns |
| Total Gate Charge | Qg | VDS =640V , ID=4A VGS =10V note 45 | - | 29.5 | 45 | nC |
| Gate-Source charge | Qgs | VDS =640V , ID=4A VGS =10V note 45 | - | 4.8 | 12.0 | nC |
| Gate-Drain charge | Qgd | VDS =640V , ID=4A VGS =10V note 45 | - | 12.8 | 30.0 | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 4 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 16 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=4A | - | - | 1.5 | V |
| Reverse recovery time | trr | VGS=0V, IS=4A dIF/dt=100A/s (note 4) | - | 580 | 1500 | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=4A dIF/dt=100A/s (note 4) | - | 3.8 | 9.0 | C |
Thermal Characteristics
| Parameter | Symbol | Max | Unit | Applicable Models |
| Thermal Resistance, Junction to Case | Rth(j-c) | 1.26 | /W | JCS4N80CC/ BC |
| Thermal Resistance, Junction to Case | Rth(j-c) | 3.27 | /W | JCS4N80FC |
| Thermal Resistance, Junction to Case | Rth(j-c) | 2.73 | /W | JCS4N80VC/ RC |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | /W | JCS4N80CC/ BC, JCS4N80FC |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 110 | /W | JCS4N80VC/ RC |
2409280032_Jilin-Sino-Microelectronics-JCS4N80RC_C3020065.pdf
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