Jilin Sino Microelectronics JCS7HN60VC IPAK 600V 7A MOSFET with low gate charge and fast switching speed
Key Attributes
Model Number:
JCS7HN60VC-IPAK
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-
RDS(on):
1.3Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 N-channel
Output Capacitance(Coss):
300pF
Input Capacitance(Ciss):
1.6nF
Pd - Power Dissipation:
120W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
JCS7HN60VC-IPAK
Package:
TO-251
Product Description
Product Overview
The JCS7HN60C is a 600V, 7.0A N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rdson-max (@Vgs=10V) () | Qg-typ (nC) |
| JCS7HN60VC-V-B / JCS7HN60VC-V-BR | N/A | IPAK | 7.0 | 600 | 1.3 | 32 |
| JCS7HN60RC-R-B / JCS7HN60RC-R-BR / JCS7HN60RC-R-A / JCS7HN60RC-R-AR | N/A | DPAK | 7.0 | 600 | 1.3 | 32 |
| JCS7HN60BC-B-B / JCS7HN60BC-B-BR | N/A | TO-262 | 7.0 | 600 | 1.3 | 32 |
| JCS7HN60SC-S-B / JCS7HN60SC-S-BR / JCS7HN60SC-S-A / JCS7HN60SC-S-AR | N/A | TO-263 | 7.0 | 600 | 1.3 | 32 |
| JCS7HN60CC-C-B / JCS7HN60CC-C-BR | N/A | TO-220C | 7.0 | 600 | 1.3 | 32 |
| JCS7HN60FC-F-B / JCS7HN60FC-F-BR | N/A | TO-220MF | 7.0 | 600 | 1.3 | 32 |
| JCS7HN60FC-F2-B / JCS7HN60FC-F2-BR | N/A | TO-220MF-K2 | 7.0 | 600 | 1.3 | 32 |
| Parameter | Symbol | Value | Unit | Notes |
| Continuous Drain Current (Tc=25) | ID | 7.0 | A | *Drain current limited by maximum junction temperature |
| Continuous Drain Current (Tc=100) | ID | 4.6* | A | *Drain current limited by maximum junction temperature |
| Pulsed Drain Current | IDM | 28* | A | Note 1 |
| Gate-Source Voltage | VGSS | 30 | V | |
| Single Pulsed Avalanche Energy | EAS | 420 | mJ | Note 2 |
| Avalanche Current | IAR | 7.0 | A | Note 1 |
| Repetitive Avalanche Energy | EAR | 12.8 | mJ | Note 1 |
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | Note 3 |
| Power Dissipation (TC=25) | PD | 120 | W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | ||
| Maximum Lead Temperature for Soldering | TL | 300 | ||
| Drain-Source Voltage | BVDSS | 600 | V | ID=250A, VGS=0V |
| Zero Gate Voltage Drain Current (VDS=600V, VGS=0V, TC=25) | IDSS | 10 | A | |
| Gate Threshold Voltage | VGS(th) | 2.0 - 4.0 | V | VDS = VGS , ID=250A |
| Static Drain-Source On-Resistance (VGS =10V, ID=3.5A) | RDS(ON) | 0.5 - 1.3 | ||
| Forward Transconductance | gfs | 5.6 | S | VDS = 40V, ID=7.0Anote 4 |
| Input capacitance | Ciss | 200 - 1600 | pF | VDS=25V,VGS =0V, f=1.0MHZ |
| Output capacitance | Coss | 50 - 300 | pF | VDS=25V,VGS =0V, f=1.0MHZ |
| Reverse transfer capacitance | Crss | 3 - 20 | pF | VDS=25V,VGS =0V, f=1.0MHZ |
| Total Gate Charge | Qg | 32 - 60 | nC | VDS =480V , ID=7A VGS =10V note 45 |
| Drain-Source Diode Forward Voltage (IS=7.0A) | VSD | - 1.4 | V | VGS=0V, IS=7.0A |
| Reverse recovery time | trr | 345 - 700 | ns | VGS=0V, IS=7.0A dIF/dt=100A/s (note 4) |
| Reverse recovery charge | Qrr | 3.2 - 6.4 | C | VGS=0V, IS=7.0A dIF/dt=100A/s (note 4) |
| Thermal Resistance, Junction to Case | Rth(j-c) | 1.04 - 4.16 | /W | Varies by package |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | /W |
2411201840_Jilin-Sino-Microelectronics-JCS7HN60VC-IPAK_C272543.pdf
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