power semiconductor device Jilin Sino-Microelectronics 3DD4251T with high breakdown voltage and current capability
Key Attributes
Model Number:
3DD4251T
Product Custom Attributes
Emitter-Base Voltage(Vebo):
15V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
1W
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
400V
Mfr. Part #:
3DD4251T
Package:
TO-92-3
Product Description
Product Overview
The 3DD4251T is a high-performance semiconductor device designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lamps, electronic ballasts, high-frequency switching power supplies, high-frequency power transforms, and general power amplifier circuits. This product is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
- Material: Not specified
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Order Code | Marking | Package | Halogen | Reel/Bag |
| 3DD4251T-TJ-A | 4251T | TO-92-FJ | Halogen | Reel |
| 3DD4251T-TJ-AR | 4251T | TO-92-FJ | Halogen-Free | Reel |
| 3DD4251T-TJ-C | 4251T | TO-92-FJ | Halogen | Bag |
| 3DD4251T-TJ-CR | 4251T | TO-92-FJ | Halogen-Free | Bag |
| 3DD4251T-T-A | 4251T | TO-92 | Halogen | Reel |
| 3DD4251T-T-AR | 4251T | TO-92 | Halogen-Free | Reel |
| 3DD4251T-T-C | 4251T | TO-92 | Halogen | Bag |
| 3DD4251T-T-CR | 4251T | TO-92 | Halogen-Free | Bag |
| 3DD4251T-T1-A | 4251T | TO-92-F1 | Halogen | Reel |
| 3DD4251T-T1-AR | 4251T | TO-92-F1 | Halogen-Free | Reel |
| 3DD4251T-T1-C | 4251T | TO-92-F1 | Halogen | Bag |
| 3DD4251T-T1-CR | 4251T | TO-92-F1 | Halogen-Free | Bag |
| 3DD4251T-TJ1-A | 4251T | TO-92-FJ-F1 | Halogen | Reel |
| 3DD4251T-TJ1-AR | 4251T | TO-92-FJ-F1 | Halogen-Free | Reel |
| 3DD4251T-TJ1-C | 4251T | TO-92-FJ-F1 | Halogen | Bag |
| 3DD4251T-TJ1-CR | 4251T | TO-92-FJ-F1 | Halogen-Free | Bag |
| Parameter | Symbol | Value (min) | Value (typ) | Value (max) | Unit | Test Conditions |
| Collector-Emitter Voltage (VBE=0) | VCES | - | - | 700 | V | - |
| Collector-Emitter Voltage (IB=0) | VCEO | 400 | 440 | - | V | Ic=10mA,IB=0 |
| Emitter-Base Voltage | VEBO | 9 | 15 | - | V | IE=1mA,Ic=0 |
| Collector Current (DC) | IC | - | - | 0.5 | A | - |
| Collector Current (pulse) | ICP | - | - | 1 | A | - |
| Total Dissipation (TO-92/TO-92-FJ) | PC | - | - | 1 | W | - |
| Junction Temperature | Tj | - | - | 150 | - | |
| Storage Temperature | Tstg | -55 | - | +150 | - | |
| Breakdown Voltage CEO | V(BR)CEO | 400 | 440 | - | V | Ic=10mA,IB=0 |
| Breakdown Voltage CBO | V(BR)CBO | 700 | 780 | - | V | Ic=1mA,IE=0 |
| Breakdown Voltage EBO | V(BR)EBO | 9 | 15 | - | V | IE=1mA,Ic=0 |
| Collector Cut-off Current | ICBO | - | - | 5 | A | VCB=700V, IE=0 |
| Collector Cut-off Current | ICEO | - | - | 10 | A | VCE=400V,IB=0 |
| Emitter Cut-off Current | IEBO | - | - | 5 | A | VEB=9V, IC=0 |
| DC Current Gain | hFE | 19 | - | 25 | - | VCE=10V, IC=20mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | 0.2 | 1.0 | V | IC=0.1A, IB=10mA |
| Base-Emitter Saturation Voltage | VBE(sat) | - | 0.8 | 1.2 | V | IC=0.05A, IB=5mA |
| Switching Time | ts | - | 1.0-1.5-2.0 | - | S | IC=0.1A |
| Thermal Resistance Junction Ambient | Rth(j-a) | - | - | 125 | /W | TO-92 /TO-92-FJ |
2409280200_Jilin-Sino-Microelectronics-3DD4251T_C3020069.pdf
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