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quality Jilin Sino Microelectronics 3DD4613H NPN transistor designed for various power amplifier applications factory
quality Jilin Sino Microelectronics 3DD4613H NPN transistor designed for various power amplifier applications factory

Jilin Sino Microelectronics 3DD4613H NPN transistor designed for various power amplifier applications

Key Attributes
Model Number: 3DD4613H
Product Custom Attributes
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
20W
Transition Frequency(fT):
4MHz
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
500V
Mfr. Part #:
3DD4613H
Package:
TO-92-3
Product Description

Product Overview

The 3DD4613H is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for battery chargers, electronic ballasts, high-frequency switching power supplies, and general power amplifier circuits. This product is RoHS compliant.

Product Attributes

  • Brand: Jilin Sino-microelectronics Co., Ltd.
  • Certifications: RoHS

Technical Specifications

Order CodeMarkingPackageHalogen-ReelHalogen-Free-ReelHalogen-BagHalogen-Free-BagHalogen-TubeHalogen-Free-TubeMain CharacteristicsApplications
3DD4613H-TJ-A4613HTO-92-FJ✔IC: 1.5A
VCEO: 500V
VCES: 900V
PC(TO-92-FJ): 1W		Battery charger
Electronic ballasts
High frequency switching power supply
High frequency power transform
Commonly power amplifier
3DD4613H-TJ-AR✔
3DD4613H-R-A4613HDPAK✔IC: 1.5A
VCEO: 500V
VCES: 900V
PC(DPAK): 20W		Battery charger
Electronic ballasts
High frequency switching power supply
High frequency power transform
Commonly power amplifier
3DD4613H-R-AR✔
3DD4613H-V-C4613HIPAK✔IC: 1.5A
VCEO: 500V
VCES: 900V
PC(IPAK): 20W		Battery charger
Electronic ballasts
High frequency switching power supply
High frequency power transform
Commonly power amplifier
3DD4613H-V-CR✔
3DD4613H-V-B4613HIPAK✔IC: 1.5A
VCEO: 500V
VCES: 900V
PC(IPAK): 20W		Battery charger
Electronic ballasts
High frequency switching power supply
High frequency power transform
Commonly power amplifier
3DD4613H-V-BR✔
ParameterSymbolValue (min)Value (typ)Value (max)UnitTest Conditions
Collector-Emitter Voltage (VBE=0)VCES900V
Collector-Emitter Voltage (IB=0)VCEO500V
Emitter-Base VoltageVEBO9V
Collector Current (DC)IC1.5A
Collector Current (pulse)ICP3.0A
Total Dissipation (TO-92-FJ)PC1W
Total Dissipation (IPAK/DPAK)PC20W
Junction TemperatureTj150℃
Storage TemperatureTstg-55+150℃
Breakdown Voltage Collector-EmitterV(BR)CEO500560VIC=10mA,IB=0
Breakdown Voltage Collector-BaseV(BR)CBO9001000VIC=1mA,IE=0
Breakdown Voltage Emitter-BaseV(BR)EBO914VIE=1mA,IC=0
Collector Cut-off CurrentICBO1µAVCB=900V, IE=0
Collector Cut-off CurrentICEO10µAVCE=500V,IB=0
Emitter Cut-off CurrentIEBO0.5µAVEB=7V, IC=0
DC Current GainHfe2026VCE=5V, IC=10mA
DC Current GainHfe203040VCE=5V, IC=0.2A
DC Current GainHfe5820VCE=5V, IC=1.0A
Collector-Emitter Saturation VoltageVCE(sat)0.71.5VIC=1.0A, IB=0.25A
Collector-Emitter Saturation VoltageVCE(sat)0.30.8VIC=0.5A, IB=0.1A
Base-Emitter Saturation VoltageVBE(sat)1.01.5VIC=1.0A, IB=250Ma
Fall Timetf1.0µsVCC=125V IC=0.1A, IB1=-IB2=0.02A
Storage Timets10µs
Transition FrequencyFt4MHzVCE=10V, IC=0.1A
Thermal Resistance Junction AmbientRth(j-a)125℃/WTO-92-FJ
Thermal Resistance Junction CaseRth(j-c)12.5℃/WIPAK
Thermal Resistance Junction CaseRth(j-c)6.25℃/WDPAK

2410121217_Jilin-Sino-Microelectronics-3DD4613H_C3020071.pdf

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