High power switching device Jilin Sino Microelectronics JCS110N07I N channel MOSFET with low Rdson
Key Attributes
Model Number:
JCS110N07I
Product Custom Attributes
Drain To Source Voltage:
70V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
330pF
Number:
1 N-channel
Output Capacitance(Coss):
500pF
Input Capacitance(Ciss):
3.8nF@25V
Pd - Power Dissipation:
208W
Gate Charge(Qg):
72nC
Mfr. Part #:
JCS110N07I
Package:
TO-220C
Product Description
Product Overview
The JCS110N07I is a N-channel enhancement mode MOSFET designed for high-power applications. It features low gate charge, low Rdson, and fast switching speeds, making it suitable for DC/DC converters, power supplies, DC motor control, automotive applications, and uninterruptible power supplies. The device is 100% avalanche tested and offers improved dv/dt capability.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | Main Characteristics | Applications | Features |
| JCS110N07I-C-B | N/A | TO-220C | ID: 110A, VDSS: 70V, Rdson-max (@Vgs=10V): 8m, Qg-typ: 72nC | High power DC/DC converters and switch mode power supplies, DC motor control, Automotive applications, Uninterruptible power supply | Low gate charge, Low Rdson, Fast switching, 100% avalanche tested, Improved dv/dt capability, RoHS product |
| JCS110N07I-C-BR | N/A | TO-220C | ID: 110A, VDSS: 70V, Rdson-max (@Vgs=10V): 8m, Qg-typ: 72nC | High power DC/DC converters and switch mode power supplies, DC motor control, Automotive applications, Uninterruptible power supply | Low gate charge, Low Rdson, Fast switching, 100% avalanche tested, Improved dv/dt capability, RoHS product |
| JCS110N07I-S-B | JCS110N07I-S | TO-263 | ID: 110A, VDSS: 70V, Rdson-max (@Vgs=10V): 8m, Qg-typ: 72nC | High power DC/DC converters and switch mode power supplies, DC motor control, Automotive applications, Uninterruptible power supply | Low gate charge, Low Rdson, Fast switching, 100% avalanche tested, Improved dv/dt capability, RoHS product |
| JCS110N07I-S-BR | JCS110N07I-S | TO-263 | ID: 110A, VDSS: 70V, Rdson-max (@Vgs=10V): 8m, Qg-typ: 72nC | High power DC/DC converters and switch mode power supplies, DC motor control, Automotive applications, Uninterruptible power supply | Low gate charge, Low Rdson, Fast switching, 100% avalanche tested, Improved dv/dt capability, RoHS product |
| JCS110N07I-S-A | JCS110N07I-S | TO-263 | ID: 110A, VDSS: 70V, Rdson-max (@Vgs=10V): 8m, Qg-typ: 72nC | High power DC/DC converters and switch mode power supplies, DC motor control, Automotive applications, Uninterruptible power supply | Low gate charge, Low Rdson, Fast switching, 100% avalanche tested, Improved dv/dt capability, RoHS product |
| JCS110N07I-S-AR | JCS110N07I-S | TO-263 | ID: 110A, VDSS: 70V, Rdson-max (@Vgs=10V): 8m, Qg-typ: 72nC | High power DC/DC converters and switch mode power supplies, DC motor control, Automotive applications, Uninterruptible power supply | Low gate charge, Low Rdson, Fast switching, 100% avalanche tested, Improved dv/dt capability, RoHS product |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | 70 | V |
| Drain Current -continuous (Tc=25) | ID | 110* | A |
| Drain Current -continuous (Tc=100) | ID | 88* | A |
| Drain Current - pulse (note 1) | IDM | 440* | A |
| Gate-Source Voltage | VGSS | 20 | V |
| Single Pulsed Avalanche Energy (note 2) | EAS | 280 | mJ |
| Avalanche Current | IAS | 75 | A |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 13 | V/ns |
| Power Dissipation (TC=25) | PD | 208 | W |
| Power Dissipation -Derate above 25 | 1.67 | W/ | |
| Operating and Storage Temperature Range | TJTSTG | -55+150 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 |
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 70 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=70V,VGS=0V, TC=25 | - | - | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=70V,VGS=0V, TC=100 | - | - | 20 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =20V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-20V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=40A | - | 6.0 | 8.0 | m |
| Forward Transconductance | gfs | VDS = 35V , ID=20A (note 4) | - | 30 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 3800 | - | pF |
| Output capacitance | Coss | - | 500 | - | pF | |
| Reverse transfer capacitance | Crss | - | 330 | - | pF | |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=40V,ID=50A,RG=5 (note 4,5) | - | 39 | - | ns |
| Turn-On rise time | tr | - | 87 | - | ns | |
| Turn-Off delay time | td(off) | - | 141 | - | ns | |
| Turn-Off Fall time | tf | - | 81 | - | ns | |
| Total Gate Charge | Qg | VDS =50V , ID=50A VGS =10V (note 4,5) | - | 72 | - | nC |
| Gate-Source charge | Qgs | - | 19 | - | nC | |
| Gate-Drain charge | Qgd | - | 25 | - | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 110 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 440 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=40A | - | - | 1.2 | V |
| Reverse recovery time | trr | VGS=0V, IS=40A dIF/dt=100A/s (note 4) | - | 31 | - | ns |
| Reverse recovery charge | Qrr | - | 41 | - | nC | |
Thermal Characteristics
| Parameter | Symbol | Max | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.60 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | /W |
2410121215_Jilin-Sino-Microelectronics-JCS110N07I_C2693288.pdf
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