Jilin Sino Microelectronics JCS10N65CT transistor with 100 percent avalanche tested and low gate charge
Key Attributes
Model Number:
JCS10N65CT
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
9.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
950mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
26pF
Number:
-
Output Capacitance(Coss):
210pF
Input Capacitance(Ciss):
2.065nF
Pd - Power Dissipation:
178W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
JCS10N65CT
Package:
TO-220C
Product Description
Product Overview
The JCS10N65T is a N-channel enhancement mode field-effect transistor designed for high-frequency switching power supplies, electronic ballasts, and UPS applications. It features low gate charge, low Crss (typical 20pF), fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
Technical Specifications
| Order Codes | Marking | Package | ID (A) | VDSS (V) | Rds(on)-max (@Vgs=10V) () | Qg-typ (nC) |
| JCS10N65BT-B-B, JCS10N65BT-B-BR | N/A | TO-262 | 9.5 | 650 | 0.95 | 34 |
| JCS10N65ST-S-B, JCS10N65ST-S-BR, JCS10N65ST-S-A, JCS10N65ST-S-AR | JCS10N65ST | TO-263 | 9.5 | 650 | 0.95 | 34 |
| JCS10N65CT-C-B, JCS10N65CT-C-BR | N/A | TO-220C | 9.5 | 650 | 0.95 | 34 |
| JCS10N65FT-F-B, JCS10N65FT-F-BR | N/A | TO-220MF | 9.5 | 650 | 0.95 | 34 |
| JCS10N65FT-F2-B, JCS10N65FT-F2-BR | N/A | TO-220MF-K2 | 9.5 | 650 | 0.95 | 34 |
Absolute Maximum Ratings (Tc=25)
| Parameter | Symbol | Value (JCS10N65CT/BT/ST) | Value (JCS10N65FT) | Unit |
| Drain-Source Voltage | VDSS | 650 | 650 | V |
| Drain Current -continuous (T=25) | ID | 9.5* | 9.5* | A |
| Drain Current -continuous (T=100) | ID | 6.0* | 6.0* | A |
| Drain Current pulsenote 1 | IDM | 30* | 30* | A |
| Gate-Source Voltage | VGSS | 30 | 30 | V |
| Single Pulsed Avalanche Energynote 2 | EAS | 713 | 713 | mJ |
| Avalanche Currentnote 1 | IAR | 9.5 | 9.5 | A |
| Repetitive Avalanche Energy note 1 | EAR | 17.8 | 17.8 | mJ |
| Peak Diode Recovery dv/dtnote 3 | dv/dt | 4.5 | 4.5 | V/ns |
| Power Dissipation TC=25 -Derate above 25 | PD | 178 (1.43 W/) | 178 (1.43 W/) | W (W/) |
| Operating and Storage Temperature Range | TJTSTG | -55+150 | -55+150 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | 300 |
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 650 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.68 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=650V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=520V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 3.0 | - | 4.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=4.75A (25) | - | 0.85 | 0.95 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=4.75A (100) | - | 1.49 | 2.0 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=4.75A (150) | - | 2.21 | 3.0 | |
| Forward Transconductance | gfs | VDS = 40V, ID=4.75Anote 4 | - | 8.2 | - | S |
| Dynamic Characteristics | ||||||
| Gate resistance | Rg | F=1.0MHZ open drain | - | 0.5 | 3.2 | |
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 800 | 2065 | pF |
| Output capacitance | Coss | - | - | 60 | 210 | pF |
| Reverse transfer capacitance | Crss | - | - | 10 | 26 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=325V,ID=9.5A,RG=25 note 45 | - | 68 | 91 | ns |
| Turn-On rise time | tr | - | - | 109 | 150 | ns |
| Turn-Off delay time | td(off) | - | - | 214 | 300 | ns |
| Turn-Off Fall time | tf | - | - | 85 | 165 | ns |
| Total Gate Charge | Qg | VDS =520V , ID=9.5A VGS =10V note 45 | - | 34 | 45 | nC |
| Gate-Source charge | Qgs | - | - | 6.9 | 15 | nC |
| Gate-Drain charge | Qgd | - | - | 12 | 30 | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 9.5 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 30 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=9.5A | - | 1.05 | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=9.5A dIF/dt=100A/s (note 4) | - | 425 | 900 | ns |
| Reverse recovery charge | Qrr | - | - | 4.31 | 8.0 | C |
Thermal Characteristics
| Parameter | Symbol | Value (JCS10N65CT/BT/ST) | Value (JCS10N65FT) | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.7 | 2.5 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | 62.5 | /W |
2409280130_Jilin-Sino-Microelectronics-JCS10N65CT_C2693284.pdf
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