power MOSFET Jilin Sino Microelectronics JCS3205CH 220C N channel with low Rds on and high ID rating
Key Attributes
Model Number:
JCS3205CH-220C
Product Custom Attributes
Drain To Source Voltage:
55V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+175℃
RDS(on):
8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
296pF
Number:
-
Output Capacitance(Coss):
1.124nF
Input Capacitance(Ciss):
5.625nF
Pd - Power Dissipation:
200W
Gate Charge(Qg):
117nC@10V
Mfr. Part #:
JCS3205CH-220C
Package:
TO-220
Product Description
N-CHANNEL MOSFET JCS3205H
The JCS3205H is an N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies and UPS applications. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
Technical Specifications
| Order Code | Package | Marking | ID (A) | VDSS (V) | Rds(on)-max (@Vgs=10V) (m) | Qg-typ (nC) |
| JCS3205CH-C-B | TO-220C | JCS3205CH | 110 | 55 | 8 | 78 |
| JCS3205CH-C-BR | TO-220C | JCS3205CH | 110 | 55 | 8 | 78 |
| JCS3205SH-S-B | TO-263 | JCS3205SH | 110 | 55 | 8 | 78 |
| JCS3205SH-S-BR | TO-263 | JCS3205SH | 110 | 55 | 8 | 78 |
| JCS3205SH-S-A | TO-263 | JCS3205SH | 110 | 55 | 8 | 78 |
| JCS3205SH-S-AR | TO-263 | JCS3205SH | 110 | 55 | 8 | 78 |
Absolute Maximum Ratings (Tc=25)
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | 55 | V |
| Drain Current -continuous | ID (T=25) | 110* | A |
| Drain Current -continuous | ID (T=100) | 80* | A |
| Drain Current pulsenote 1 | IDM | 440* | A |
| Gate-Source Voltage | VGSS | 20 | V |
| Single Pulsed Avalanche Energynote 2 | EAS | 2970 | mJ |
| Avalanche Currentnote 1 | IAR | 60 | A |
| Repetitive Avalanche Currentnote 1 | EAR | 20 | mJ |
| Peak Diode Recovery dv/dtnote 3 | dv/dt | 5.0 | V/ns |
| Power Dissipation | PD (TC=25) | 200 | W |
| Power Dissipation -Derate above 25 | 1.33 | W/ | |
| Operating and Storage Temperature Range | TJTSTG | -55+175 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 |
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 55 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.057 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=55V,VGS=0V, TC=25 | - | - | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=44V, TC=125 | - | - | 10 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =20V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-20V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=60A, T=25 | - | 7 | 8 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=60A, T=100 | - | 10.5 | 12 | m |
| Forward Transconductance | gfs | VDS = 28V, ID=60Anote 4 | - | 43 | - | S |
| Dynamic Characteristics | ||||||
| Gate Resistance | Rg | f=1.0MHZ, VDS OPEN | - | 0.5 | 2.6 | |
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 1375 | 5625 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 375 | 1124 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 99 | 296 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=28V,ID=60A,RG=25 VGS =10V note 45 | - | 17 | 26 | ns |
| Turn-On rise time | tr | - | 122 | 183 | ns | |
| Turn-Off delay time | td(off) | - | 57 | 86 | ns | |
| Turn-Off Fall time | tf | - | 72 | 108 | ns | |
| Total Gate Charge | Qg | VDS =44V , ID=60A VGS =10V note 45 | - | 38 | 117 | nC |
| Gate-Source charge | Qgs | VDS =44V , ID=60A VGS =10V note 45 | - | 6.6 | 20 | nC |
| Gate-Drain charge | Qgd | VDS =44V , ID=60A VGS =10V note 45 | - | 18.9 | 56 | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 110 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 440 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=60A | - | - | 1.3 | V |
| Reverse recovery time | trr | VGS=0V, IS=60A dIF/dt=100A/s (note 4) | - | 67 | 127 | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=60A dIF/dt=100A/s (note 4) | - | 163 | 253 | nC |
Thermal Characteristics
| Parameter | Symbol | Max | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.75 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | /W |
2410121217_Jilin-Sino-Microelectronics-JCS3205CH-220C_C272582.pdf
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