switching transistor Jilin Sino Microelectronics JCS640RH O R N A for UPS and power supply circuits
Key Attributes
Model Number:
JCS640RH-O-R-N-A
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-
RDS(on):
150mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
25pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
173pF
Input Capacitance(Ciss):
1.001nF@25V
Pd - Power Dissipation:
140W
Gate Charge(Qg):
27.5nC@10V
Mfr. Part #:
JCS640RH-O-R-N-A
Package:
DPAK
Product Description
Product Overview
The JCS640H is a N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and UPS applications. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability, making it a RoHS compliant product.
Product Attributes
- Brand: JCS (Jilin Sino-microelectronics)
- Origin: China
- Certifications: RoHS
- Halogen Free: No
Technical Specifications
| Order Codes | Marking | Package | Device Weight (typ) | ID (A) | VDSS (V) | Rdson-max (@Vgs=10V) () | Qg-typ (nC) |
| JCS640VH-O-V-N-B | JCS640VH | IPAK | 0.35 g | 18 | 200 | 0.15 | 27.5 |
| JCS640RH-O-R-N-B | JCS640RH | DPAK | 0.35 g | 18 | 200 | 0.15 | 27.5 |
| JCS640RH-O-R-N-A | JCS640RH | DPAK | 0.35 g | 18 | 200 | 0.15 | 27.5 |
| JCS640CH-O-C-N-B | JCS640CH | TO-220C | 2.06 g | 18 | 200 | 0.15 | 27.5 |
| JCS640FH-O-F-N-B | JCS640FH | TO-220MF | 2.22 g | 18 | 200 | 0.15 | 27.5 |
Absolute Maximum Ratings
| Parameter | Symbol | Value (JCS640VH/RH/CH) | Value (JCS640FH) | Unit |
| Drain-Source Voltage | VDSS | 200 | 200 | V |
| Drain Current -continuous (T=25) | ID | 18* | 18* | A |
| Drain Current -continuous (T=100) | ID | 16* | 16* | A |
| Drain Current -pulse (note 1) | IDM | 72* | 72* | A |
| Gate-Source Voltage | VGSS | 30 | 30 | V |
| Single Pulsed Avalanche Energy (note 2) | EAS | 259 | 259 | mJ |
| Avalanche Current (note 1) | IAR | 18 | 18 | A |
| Repetitive Avalanche Energy (note 1) | EAR | 14 | 4.4 | mJ |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 5.5 | 5.5 | V/ns |
| Power Dissipation (TC=25) | PD | 140 | 44 | W |
| Power Dissipation -Derate above 25 | 1.12 | 0.35 | W/ | |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | -55+150 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | 300 |
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Units |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 200 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS /TJ | ID=250A, referenced to 25 | - | 0.2 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=200V, VGS=0V, TC=25 | - | - | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=160V, TC=125 | - | - | 10 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=9A | - | 0.12 | 0.15 | |
| Forward Transconductance | gfs | VDS = 40V , ID=9Anote 4 | - | 14.5 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 1001 | - | pF |
| Output capacitance | Coss | - | 173 | - | pF | |
| Reverse transfer capacitance | Crss | - | 25 | - | pF | |
Thermal Characteristics
| Parameter | Symbol | Value (JCS640VH/RH/CH) | Value (JCS640FH) | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.89 | 2.85 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | 62.5 | /W |
Switching Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Units |
| Turn-On delay time | td(on) | VDD=100V,ID=18A,RG=25 VGS =10V note 45 | - | 15.2 | 21 | ns |
| Turn-On rise time | tr | - | 38.7 | 54 | ns | |
| Turn-Off delay time | td(off) | - | 46.4 | 65 | ns | |
| Turn-Off Fall time | tf | - | 12.8 | 18 | ns | |
| Total Gate Charge | Qg | VDS =160V , ID=18A VGS =10Vnote 45 | - | 27.5 | 36 | nC |
| Gate-Source charge | Qgs | - | 5.7 | - | nC | |
| Gate-Drain charge | Qgd | - | 10.8 | - | nC |
Drain-Source Diode Characteristics and Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 18 | A |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 72 | A |
| Maximum Continuous Drain-Source Diode Forward Current | VSD | 1.4 | V |
| Reverse recovery time | trr | 224 | ns |
| Reverse recovery charge | Qrr | 1.38 | C |
2410121215_Jilin-Sino-Microelectronics-JCS640RH-O-R-N-A_C97369.pdf
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