Wide Voltage Range Silicon Zener Diode Jingdao Microelectronics MM1Z3V6BW in Small Plastic SOD123W Package
Key Attributes
Model Number:
MM1Z3V6BW
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Impedance(Zzt):
130Ω
Zener Voltage(Range):
3.53V~3.67V
Pd - Power Dissipation:
500mW
Zener Voltage(Nom):
3.6V
Mfr. Part #:
MM1Z3V6BW
Package:
SOD-123W
Product Description
Product Overview
Silicon Planar Zener Diodes designed for surface-mounted applications. These diodes offer a wide zener reverse voltage range from 2.0V to 75V with a total power dissipation of up to 500mW. They feature a tolerance of approximately 2% and are housed in a small plastic SOD-123W package, suitable for automated assembly.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong, China
- Package Type: SOD-123W
- Tolerance: Approximately 2%
Technical Specifications
| Type Marking | Zener Voltage Range (VZT) Nom (V) | Zener Voltage Range (VZT) Min (V) | Zener Voltage Range (VZT) Max (V) | ZT (mA) | ZZT (Max. ) | IR (Max. A) at VR | VF (V) at IF = 10 mA | Ptot (Max. mW) | RJA (C/W) |
|---|---|---|---|---|---|---|---|---|---|
| MM1Z2V0BW | 2.0 | 1.96 | 2.04 | 5 | 120 | 100 | 0.9 | 500 | 340 |
| MM1Z2V2BW | 2.2 | 2.16 | 2.24 | 5 | 120 | 100 | 0.9 | 500 | 340 |
| MM1Z2V4BW | 2.4 | 2.35 | 2.45 | 5 | 120 | 100 | 0.9 | 500 | 340 |
| MM1Z2V7BW | 2.7 | 2.65 | 2.75 | 5 | 110 | 100 | 0.9 | 500 | 340 |
| MM1Z3V0BW | 3.0 | 2.94 | 3.06 | 5 | 130 | 100 | 0.9 | 500 | 340 |
| MM1Z3V3BW | 3.3 | 3.23 | 3.37 | 5 | 130 | 100 | 0.9 | 500 | 340 |
| MM1Z3V6BW | 3.6 | 3.53 | 3.67 | 5 | 130 | 100 | 0.9 | 500 | 340 |
| MM1Z3V9BW | 3.9 | 3.82 | 3.98 | 5 | 130 | 100 | 0.9 | 500 | 340 |
| MM1Z4V3BW | 4.3 | 4.21 | 4.39 | 5 | 130 | 100 | 0.9 | 500 | 340 |
| MM1Z4V7BW | 4.7 | 4.61 | 4.79 | 5 | 130 | 100 | 0.9 | 500 | 340 |
| MM1Z5V1BW | 5.1 | 5 | 5.20 | 5 | 130 | 80 | 0.9 | 500 | 340 |
| MM1Z5V6BW | 5.6 | 5.49 | 5.71 | 5 | 130 | 50 | 0.9 | 500 | 340 |
| MM1Z6V2BW | 6.2 | 6.08 | 6.32 | 5 | 130 | 30 | 0.9 | 500 | 340 |
| MM1Z6V8BW | 6.8 | 6.66 | 6.94 | 5 | 130 | 30 | 0.9 | 500 | 340 |
| MM1Z7V5BW | 7.5 | 7.35 | 7.65 | 5 | 130 | 30 | 0.9 | 500 | 340 |
| MM1Z8V2BW | 8.2 | 8.04 | 8.36 | 5 | 130 | 30 | 0.9 | 500 | 340 |
| MM1Z9V1BW | 9.1 | 8.92 | 9.28 | 5 | 130 | 30 | 0.9 | 500 | 340 |
| MM1Z10BW | 10 | 9.8 | 10.2 | 5 | 130 | 35 | 0.9 | 500 | 340 |
| MM1Z11BW | 11 | 10.78 | 11.22 | 5 | 130 | 35 | 0.9 | 500 | 340 |
| MM1Z12BW | 12 | 11.76 | 12.24 | 5 | 130 | 40 | 0.9 | 500 | 340 |
| MM1Z13BW | 13 | 12.74 | 13.26 | 5 | 130 | 40 | 0.9 | 500 | 340 |
| MM1Z15BW | 15 | 14.7 | 15.3 | 5 | 130 | 45 | 0.9 | 500 | 340 |
| MM1Z16BW | 16 | 15.68 | 16.32 | 5 | 130 | 50 | 0.9 | 500 | 340 |
| MM1Z18BW | 18 | 17.64 | 18.36 | 5 | 130 | 55 | 0.9 | 500 | 340 |
| MM1Z20BW | 20 | 19.6 | 20.4 | 5 | 130 | 60 | 0.9 | 500 | 340 |
| MM1Z22BW | 22 | 21.56 | 22.44 | 5 | 130 | 70 | 0.9 | 500 | 340 |
| MM1Z24BW | 24 | 23.52 | 24.48 | 5 | 130 | 80 | 0.9 | 500 | 340 |
| MM1Z27BW | 27 | 26.46 | 27.54 | 5 | 130 | 80 | 0.9 | 500 | 340 |
| MM1Z30BW | 30 | 29.4 | 30.6 | 5 | 130 | 90 | 0.9 | 500 | 340 |
| MM1Z33BW | 33 | 32.34 | 33.66 | 5 | 130 | 100 | 0.9 | 500 | 340 |
| MM1Z36BW | 36 | 35.28 | 36.72 | 5 | 130 | 120 | 0.9 | 500 | 340 |
| MM1Z39BW | 39 | 38.22 | 39.78 | 5 | 130 | 120 | 0.9 | 500 | 340 |
| MM1Z43BW | 43 | 42.14 | 43.86 | 5 | 130 | 120 | 0.9 | 500 | 340 |
| MM1Z47BW | 47 | 46.06 | 47.94 | 5 | 130 | 50 | 0.9 | 500 | 340 |
| MM1Z51BW | 51 | 49.98 | 52.02 | 5 | 130 | 20 | 0.9 | 500 | 340 |
| MM1Z56BW | 56 | 54.88 | 57.12 | 5 | 130 | 10 | 0.9 | 500 | 340 |
| MM1Z62BW | 62 | 60.76 | 63.24 | 5 | 130 | 5 | 0.9 | 500 | 340 |
| MM1Z68BW | 68 | 66.64 | 69.36 | 5 | 130 | 5 | 0.9 | 500 | 340 |
| MM1Z75BW | 75 | 73.5 | 76.5 | 5 | 130 | 2 | 0.9 | 500 | 340 |
2209140930_Jingdao-Microelectronics-MM1Z3V6BW_C4749069.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
