Low gate charge N channel MOSFET Jilin Sino Microelectronics JCS3910V for switch mode power supplies

Key Attributes
Model Number: JCS3910V
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
16A
Operating Temperature -:
-55℃~+175℃
RDS(on):
115mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
119pF
Number:
-
Output Capacitance(Coss):
218pF
Input Capacitance(Ciss):
828pF
Pd - Power Dissipation:
79W
Gate Charge(Qg):
27nC@10V
Mfr. Part #:
JCS3910V
Package:
IPAK
Product Description

Product Overview

The JCS3910 is a N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and UPS applications. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability, making it a RoHS compliant product.

Product Attributes

  • Brand: JCS
  • Origin: Jilin Sino-microelectronics Co., Ltd
  • Certifications: RoHS

Technical Specifications

Order CodeMarkingPackageID (A)VDSS (V)Rds(on)-max (@Vgs=10V) (m)Qg-typ (nC)
JCS3910V-V-B / JCS3910V-V-BRJCS3910VIPAK1610011518.9
JCS3910R-R-B / JCS3910R-R-BR / JCS3910R-R-A / JCS3910R-R-ARJCS3910RDPAK1610011518.9
JCS3910F-F-B / JCS3910F-F-BRJCS3910FTO-220MF1610011518.9
JCS3910C-C-B / JCS3910C-C-BRJCS3910CTO-220C1610011518.9

Absolute Maximum Ratings

ParameterSymbolJCS3910V/R/CJCS3910FUnit
Drain-Source VoltageVDSS100100V
Continuous Drain CurrentID (Tc=25)16*16*A
Continuous Drain CurrentID (Tc=100)12*12*A
Pulse Drain Current (note 1)IDM64*64*A
Gate-Source VoltageVGSS3030V
Single Pulsed Avalanche Energy (note 2)EAS153.6153.6mJ
Avalanche Current (note 1)IAR1616A
Repetitive Avalanche Energy (note 1)EAR7.97.9mJ
Peak Diode Recovery dv/dt (note 3)dv/dt5.15.1V/ns
Power Dissipation (Tc=25)PD7947W
Power Dissipation (-Derate above 25)PD0.530.31W/
Operating and Storage Temperature RangeTJ, TSTG-55+175-55+175
Maximum Lead Temperature for Soldering PurposesTL300300

Electrical Characteristics

ParameterSymbolTests conditionsMinTypMaxUnit
Drain-Source VoltageBVDSSID=250A, VGS=0V100--V
Breakdown Voltage Temperature CoefficientBVDSS/ TJID=250A, referenced to 25-0.09-V/
Zero Gate Voltage Drain CurrentIDSSVDS=100V, VGS=0V, TC=25--1A
Zero Gate Voltage Drain CurrentIDSSVDS=80V, TC=125--10A
Gate-body leakage current, forwardIGSSFVDS=0V, VGS =30V--100nA
Gate-body leakage current, reverseIGSSRVDS=0V, VGS =-30V---100nA
Gate Threshold VoltageVGS(th)VDS = VGS , ID=250A2.0-4.0V
Static Drain-Source On-ResistanceRDS(ON)VGS =10V , ID=8.0A-95115m
Forward TransconductancegfsVDS = 40V, ID=16.0A (note 4)-7.8-S
Input capacitanceCiss--318828pF
Output capacitanceCoss--80218pF
Reverse transfer capacitanceCrssVDS=25V, VGS =0V, f=1.0MHZ-40119pF
Turn-On delay timetd(on)--7.19.4ns
Turn-On rise timetr--3141ns
Turn-Off delay timetd(off)--4255ns
Turn-Off Fall timetfVDD=50V,ID=16A,RG=25 (note 4,5)-2431ns
Total Gate ChargeQgVDS =80V , ID=16A VGS =10V (note 4,5)-18.927nC
Gate-Source chargeQgs--4.1-nC
Gate-Drain chargeQgd--7.4-nC
Maximum Continuous Drain -Source Diode Forward CurrentIS---16A
Maximum Pulsed Drain-Source Diode Forward CurrentISM---64A
Drain-Source Diode Forward VoltageVSDVGS=0V, IS=16A--1.4V
Reverse recovery timetrr--127-ns
Reverse recovery chargeQrrVGS=0V, IS=16A dIF/dt=100A/s (note 4)-710-nC

Thermal Characteristics

ParameterSymbolJCS3910V/R/CJCS3910FUnit
Thermal Resistance, Junction to CaseRth(j-c)1.893.2/W
Thermal Resistance, Junction to AmbientRth(j-A)62.545.9/W

2411201841_Jilin-Sino-Microelectronics-JCS3910V_C2693293.pdf

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