Jilin Sino Microelectronics JCS160N08I S AR MOSFET featuring TO 263 package and RoHS compliant design
Key Attributes
Model Number:
JCS160N08I-S-AR
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
316pF@25V
Number:
-
Input Capacitance(Ciss):
6.6nF@25V
Pd - Power Dissipation:
250W
Gate Charge(Qg):
133nC
Mfr. Part #:
JCS160N08I-S-AR
Package:
TO-263
Product Description
Product Overview
The JCS160N08I is a N-channel MOSFET designed for high-power applications. It features low gate charge, low Rdson, fast switching speed, and is 100% avalanche tested with improved dv/dt capability. This RoHS-compliant product is suitable for high power DC/DC converters, switch mode power supplies, DC motor control, automotive applications, and uninterruptible power supplies.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
- Package: TO-263
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rdson-max (@Vgs=10V) (m) | Qg-typ (nC) |
| JCS160N08I-S-B | JCS160N08I | TO-263 | 160 | 80 | 5.8 | 133 |
| JCS160N08I-S-BR | JCS160N08I | TO-263 | 160 | 80 | 5.8 | 133 |
| JCS160N08I-S-A | JCS160N08I | TO-263 | 160 | 80 | 5.8 | 133 |
| JCS160N08I-S-AR | JCS160N08I | TO-263 | 160 | 80 | 5.8 | 133 |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 80 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=80V,VGS=0V, TC=25 | - | - | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=80V,VGS=0V, TC=100 | - | - | 10 | A |
| Gate-Source Voltage | VGSS | 20 | V | |||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=40A | - | 4.6 | 5.8 | m |
| Forward Transconductance | gfs | VDS = 40V , ID=20A | - | 30 | - | S |
| Input capacitance | Ciss | - | 6600 | - | pF | |
| Output capacitance | Coss | - | 585 | - | pF | |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 316 | - | pF |
| Turn-On delay time | td(on) | - | 104 | - | ns | |
| Turn-On rise time | tr | - | 186 | - | ns | |
| Turn-Off delay time | td(off) | - | 343 | - | ns | |
| Turn-Off Fall time | tf | VDD=40V,ID=50A,RG=25 | - | 181 | - | ns |
| Total Gate Charge | Qg | - | 133 | - | nC | |
| Gate-Source charge | Qgs | - | 36 | - | nC | |
| Gate-Drain charge | Qgd | VDS =50V , ID=50A VGS =10V | - | 40 | - | nC |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=40A | - | - | 1.2 | V |
| Reverse recovery time | trr | - | 49 | - | ns | |
| Reverse recovery charge | Qrr | VGS=0V, IS=40A dIF/dt=100A/s | - | 91 | - | nC |
| Thermal Resistance, Junction to Case | Rth(j-c) | - | 0.60 | - | /W | |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | - | 62.5 | - | /W |
2411201842_Jilin-Sino-Microelectronics-JCS160N08I-S-AR_C2693257.pdf
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