Jilin Sino Microelectronics JCS4N60RB N channel MOSFET with low gate charge and fast switching speed
Key Attributes
Model Number:
JCS4N60RB
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
1 N-channel
Output Capacitance(Coss):
124pF
Input Capacitance(Ciss):
1.1nF
Pd - Power Dissipation:
165.56W
Gate Charge(Qg):
18.1nC
Mfr. Part #:
JCS4N60RB
Package:
DPAK
Product Description
Product Overview
The JCS4N60B is a N-channel enhancement mode MOSFET designed for high-frequency switch mode power supplies, electronic lamp ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability. This RoHS compliant product is available in various packages and configurations.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Order Codes | Marking | Package | ID (A) | VDSS (V) | Rdson (Vgs=10V) () | Qg (nC) |
| JCS4N60VB-V-B / JCS4N60VB-V-BR | N/A | IPAK | 4.0 | 600 | 2.4 | 18.1 |
| JCS4N60RB-R-B / JCS4N60RB-R-BR / JCS4N60RB-R-A / JCS4N60RB-R-AR | JCS4N60RB | DPAK | 4.0 | 600 | 2.4 | 18.1 |
| JCS4N60BB-B-B / JCS4N60BB-B-BR | N/A | TO-262 | 4.0 | 600 | 2.4 | 18.1 |
| JCS4N60SB-S-B / JCS4N60SB-S-BR / JCS4N60SB-S-A / JCS4N60SB-S-AR | JCS4N60SB | TO-263 | 4.0 | 600 | 2.4 | 18.1 |
| JCS4N60CB-C-B / JCS4N60CB-C-BR | N/A | TO-220C | 4.0 | 600 | 2.4 | 18.1 |
| JCS4N60FB-F-B / JCS4N60FB-F-BR | N/A | TO-220MF | 4.0 | 600 | 2.4 | 18.1 |
| JCS4N60FB-F2-B / JCS4N60FB-F2-BR | N/A | TO-220MF-K2 | 4.0 | 600 | 2.4 | 18.1 |
| JCS4N60VB-V2-B / JCS4N60VB-V2-BR | N/A | IPAK-S2 | 4.0 | 600 | 2.4 | 18.1 |
2411201841_Jilin-Sino-Microelectronics-JCS4N60RB_C2693244.pdf
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