220MF package N channel MOSFET Jilin Sino Microelectronics JCS5N65FB 220MF with low Crss typical 9pF
Key Attributes
Model Number:
JCS5N65FB-220MF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
-
Output Capacitance(Coss):
124pF
Input Capacitance(Ciss):
642pF
Pd - Power Dissipation:
33W
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
JCS5N65FB-220MF
Package:
TO-220F-3
Product Description
Product Overview
The JCS5N65FB is an N-channel MOSFET designed for high-frequency switching power supplies, electronic ballasts, and UPS systems. It features low gate charge, low Crss (typical 9pF), fast switching speeds, and is 100% avalanche tested with improved dv/dt capability. This RoHS-compliant product is available in a TO-220MF package.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Package: TO-220MF
- Certifications: RoHS
- Flame-retardant grade: UL94-V0
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Drain-Source Voltage | VDSS | 650 | V | |
| Continuous Drain Current (Tc=25) | ID | 4.0* | A | *Drain current limited by maximum junction temperature |
| Continuous Drain Current (Tc=100) | ID | 2.5* | A | *Drain current limited by maximum junction temperature |
| Pulse Drain Current | IDM | 16* | A | Note 1 |
| Gate-Source Voltage | VGSS | 30 | V | |
| Single Pulsed Avalanche Energy | EAS | 240 | mJ | Note 2 |
| Avalanche Current | IAR | 4.0 | A | Note 1 |
| Repetitive Avalanche Energy | EAR | 10.0 | mJ | Note 1 |
| Peak Diode Recovery dv/dt | dv/dt | 5.5 | V/ns | Note 3 |
| Power Dissipation (Tc=25) | PD | 33 | W | |
| Derate above 25 | 0.26 | W/ | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | ||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | ||
| Gate Threshold Voltage | VGS(th) | 2.0 - 4.0 | V | VDS = VGS , ID=250A |
| Static Drain-Source On-Resistance | RDS(ON) | - 1.7 - 2.4 | VGS =10V , ID=2A | |
| Forward Transconductance | gfs | - 4.7 | S | VDS = 40V , ID=2A (note 4) |
| Input Capacitance | Ciss | - 490 - 642 | pF | VDS=25V, VGS =0V, f=1.0MHZ |
| Output Capacitance | Coss | - 95 - 124 | pF | VDS=25V, VGS =0V, f=1.0MHZ |
| Reverse Transfer Capacitance | Crss | - 9 - 12 | pF | VDS=25V, VGS =0V, f=1.0MHZ |
| Total Gate Charge | Qg | - 13.3 - 19 | nC | VDS =520V , ID=4A VGS =10V (note 4,5) |
| Drain-Source Diode Forward Voltage | VSD | - - 1.4 | V | VGS=0V, IS=4.0A |
| Reverse recovery time | trr | - 330 - | ns | VGS=0V, IS=4.0A dIF/dt=100A/s (note 4) |
| Reverse recovery charge | Qrr | - 2.67 - | C | VGS=0V, IS=4.0A dIF/dt=100A/s (note 4) |
| Thermal Resistance, Junction to Case | Rth(j-c) | 3.79 | /W | |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | /W |
2411201842_Jilin-Sino-Microelectronics-JCS5N65FB-220MF_C272595.pdf
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