N channel MOSFET Jilin Sino Microelectronics JCS8N60FC 220MF designed for LED power supplies and ballasts
Key Attributes
Model Number:
JCS8N60FC-220MF
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.6Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
-
Output Capacitance(Coss):
170pF
Input Capacitance(Ciss):
1.89nF
Pd - Power Dissipation:
40W
Gate Charge(Qg):
41nC@10V
Mfr. Part #:
JCS8N60FC-220MF
Package:
TO-220F-3
Product Description
N-CHANNEL MOSFET JCS8N60C
The JCS8N60C is an N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and LED power supplies. It features low gate charge, low Crss (typical 14pF), fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
Technical Specifications
| Order Codes | Marking | Package | ID (A) | VDSS (V) | Rds(on) (@Vgs=10V) () | Qg (nC) |
| JCS8N60VC-V-B, JCS8N60VC-V-BR | N/A | IPAK | 7.0 | 600 | 1.6 | 32 |
| JCS8N60RC-R-B, JCS8N60RC-R-BR, JCS8N60RC-R-A, JCS8N60RC-R-AR | JCS8N60RC | DPAK | 7.0 | 600 | 1.6 | 32 |
| JCS8N60BC-B-B, JCS8N60BC-B-BR | N/A | TO-262 | 7.0 | 600 | 1.6 | 32 |
| JCS8N60SC-S-B, JCS8N60SC-S-BR, JCS8N60SC-S-A, JCS8N60SC-S-AR | JCS8N60SC | TO-263 | 7.0 | 600 | 1.6 | 32 |
| JCS8N60CC-C-B, JCS8N60CC-C-BR | N/A | TO-220C | 7.0 | 600 | 1.6 | 32 |
| JCS8N60FC-F-B, JCS8N60FC-F-BR | N/A | TO-220MF | 7.0 | 600 | 1.6 | 32 |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | 600 | V |
| Drain Current -continuous (Tc=25) | ID | 7.0* | A |
| Drain Current -continuous (Tc=100) | ID | 4.6* | A |
| Drain Current - pulse (note 1) | IDM | 28* | A |
| Gate-Source Voltage | VGSS | 30 | V |
| Single Pulsed Avalanche Energy (note 2) | EAS | 420 | mJ |
| Avalanche Current (note 1) | IAR | 7.0 | A |
| Repetitive Avalanche Energy (note 1) | EAR | 12.8 | mJ |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 4.5 | V/ns |
| Power Dissipation (TC=25) | PD | 120 | W |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 |
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 600 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=600V,VGS=0V, TC=25 | - | - | 10 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=3.5A | - | 1.26 | 1.6 | |
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 1620 | 1890 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 125 | 170 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 14 | 20 | pF |
| Turn-On delay time | td(on) | VDD=300V,ID=7A,RG=25 (note 4,5) | - | 11 | 31 | ns |
| Turn-On rise time | tr | VDD=300V,ID=7A,RG=25 (note 4,5) | - | 35 | 80 | ns |
| Turn-Off delay time | td(off) | VDD=300V,ID=7A,RG=25 (note 4,5) | - | 46 | 95 | ns |
| Turn-Off Fall time | tf | VDD=300V,ID=7A,RG=25 (note 4,5) | - | 40 | 92 | ns |
| Total Gate Charge | Qg | VDS =480V , ID=7A VGS =10V (note 4,5) | - | 32 | 41 | nC |
2409280202_Jilin-Sino-Microelectronics-JCS8N60FC-220MF_C272574.pdf
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