N channel MOSFET Jilin Sino Microelectronics JCS13N50FT 220MF with 13 amp continuous current rating

Key Attributes
Model Number: JCS13N50FT-220MF
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃
RDS(on):
460mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 N-channel
Output Capacitance(Coss):
260pF
Input Capacitance(Ciss):
2.09nF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
50nC@10V
Mfr. Part #:
JCS13N50FT-220MF
Package:
TO-220F-3
Product Description

Product Overview

The JCS13N50FT is an N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and UPS systems. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.

Product Attributes

  • Brand: Jilin Sino-microelectronics Co., Ltd.
  • Certifications: RoHS

Technical Specifications

ParameterSymbolValueUnitTest ConditionsMinTypMax
MAIN CHARACTERISTICS
ID13A
VDSS500V
RDS(ON)-max0.46VGS=10V
Qg-typ37nC
ABSOLUTE RATINGS
Drain-Source VoltageVDSS500V(Tc=25)
Drain Current -ContinuousID13.0*AT=25
Drain Current -ContinuousID8*AT=100
Drain Current -PulseIDM52*A(note 1)
Gate-Source VoltageVGSS30V
Single Pulsed Avalanche EnergyEAS845mJ(note 2)
Avalanche CurrentIAR13.0A(note 1)
Repetitive Avalanche EnergyEAR5.0mJ(note 1)
Peak Diode Recovery dv/dtdv/dt4.5V/ns(note 3)
Power DissipationPD50WTC=25
Power Dissipation -Derate above 250.4W/
Operating and Storage Temperature RangeTJ, TSTG-55+150
Maximum Lead Temperature for Soldering PurposesTL300
ELECTRICAL CHARACTERISTICS
Drain-Source VoltageBVDSS500VID=250A, VGS=0V
Breakdown Voltage Temperature CoefficientBVDSS /TJV/ID=250A, referenced to 250.53
Zero Gate Voltage Drain CurrentIDSSAVDS=500V, VGS=0V, TC=2510
Zero Gate Voltage Drain CurrentIDSSAVDS=400V, TC=125100
Gate-body Leakage Current, ForwardIGSSFnAVDS=0V, VGS =30V100
Gate-body Leakage Current, ReverseIGSSRnAVDS=0V, VGS =-30V-100
Gate Threshold VoltageVGS(th)3.0VVDS = VGS , ID=250A5.0
Static Drain-Source On-ResistanceRDS(ON)VGS =10V , ID=6.5A0.370.46
Forward TransconductancegfsSVDS = 40V , ID=6.5Anote 415
DYNAMIC CHARACTERISTICS
Input CapacitanceCisspFVDS=25V, VGS =0V, f=1.0MHZ15602090
Output CapacitanceCosspF210260
Reverse Transfer CapacitanceCrsspF2530
SWITCHING CHARACTERISTICS
Turn-On delay timetd(on)nsVDD=250V,ID=13A,RG=25 note 4590180
Turn-On rise timetrns160270
Turn-Off delay timetd(off)ns150260
Turn-Off Fall timetfns60140
Total Gate ChargeQgnCVDS =400V , ID=13A VGS =10Vnote 453750
Gate-Source chargeQgsnC10.9
Gate-Drain chargeQgdnC17.2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward CurrentISA13
Maximum Pulsed Drain-Source Diode Forward CurrentISMA52
Maximum Continuous Drain-Source Diode Forward CurrentVSDVVGS=0V, IS=13A1.4
Reverse Recovery TimetrrnsVGS=0V, IS=13A dIF/dt=100A/s (note 4)410
Reverse Recovery ChargeQrrC4.5
THERMAL CHARACTERISTIC
Thermal Resistance, Junction to CaseRth(j-c)/W2.50
Thermal Resistance, Junction to AmbientRth(j-A)/W62.5

2411201841_Jilin-Sino-Microelectronics-JCS13N50FT-220MF_C272558.pdf

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