N channel MOSFET Jilin Sino Microelectronics JCS13N50FT 220MF with 13 amp continuous current rating
Product Overview
The JCS13N50FT is an N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and UPS systems. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Conditions | Min | Typ | Max |
| MAIN CHARACTERISTICS | |||||||
| ID | 13 | A | |||||
| VDSS | 500 | V | |||||
| RDS(ON)-max | 0.46 | VGS=10V | |||||
| Qg-typ | 37 | nC | |||||
| ABSOLUTE RATINGS | |||||||
| Drain-Source Voltage | VDSS | 500 | V | (Tc=25) | |||
| Drain Current -Continuous | ID | 13.0* | A | T=25 | |||
| Drain Current -Continuous | ID | 8* | A | T=100 | |||
| Drain Current -Pulse | IDM | 52* | A | (note 1) | |||
| Gate-Source Voltage | VGSS | 30 | V | ||||
| Single Pulsed Avalanche Energy | EAS | 845 | mJ | (note 2) | |||
| Avalanche Current | IAR | 13.0 | A | (note 1) | |||
| Repetitive Avalanche Energy | EAR | 5.0 | mJ | (note 1) | |||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | (note 3) | |||
| Power Dissipation | PD | 50 | W | TC=25 | |||
| Power Dissipation -Derate above 25 | 0.4 | W/ | |||||
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | |||||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | |||||
| ELECTRICAL CHARACTERISTICS | |||||||
| Drain-Source Voltage | BVDSS | 500 | V | ID=250A, VGS=0V | |||
| Breakdown Voltage Temperature Coefficient | BVDSS /TJ | V/ | ID=250A, referenced to 25 | 0.53 | |||
| Zero Gate Voltage Drain Current | IDSS | A | VDS=500V, VGS=0V, TC=25 | 10 | |||
| Zero Gate Voltage Drain Current | IDSS | A | VDS=400V, TC=125 | 100 | |||
| Gate-body Leakage Current, Forward | IGSSF | nA | VDS=0V, VGS =30V | 100 | |||
| Gate-body Leakage Current, Reverse | IGSSR | nA | VDS=0V, VGS =-30V | -100 | |||
| Gate Threshold Voltage | VGS(th) | 3.0 | V | VDS = VGS , ID=250A | 5.0 | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=6.5A | 0.37 | 0.46 | |||
| Forward Transconductance | gfs | S | VDS = 40V , ID=6.5Anote 4 | 15 | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Input Capacitance | Ciss | pF | VDS=25V, VGS =0V, f=1.0MHZ | 1560 | 2090 | ||
| Output Capacitance | Coss | pF | 210 | 260 | |||
| Reverse Transfer Capacitance | Crss | pF | 25 | 30 | |||
| SWITCHING CHARACTERISTICS | |||||||
| Turn-On delay time | td(on) | ns | VDD=250V,ID=13A,RG=25 note 45 | 90 | 180 | ||
| Turn-On rise time | tr | ns | 160 | 270 | |||
| Turn-Off delay time | td(off) | ns | 150 | 260 | |||
| Turn-Off Fall time | tf | ns | 60 | 140 | |||
| Total Gate Charge | Qg | nC | VDS =400V , ID=13A VGS =10Vnote 45 | 37 | 50 | ||
| Gate-Source charge | Qgs | nC | 10.9 | ||||
| Gate-Drain charge | Qgd | nC | 17.2 | ||||
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | |||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | A | 13 | ||||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | A | 52 | ||||
| Maximum Continuous Drain-Source Diode Forward Current | VSD | V | VGS=0V, IS=13A | 1.4 | |||
| Reverse Recovery Time | trr | ns | VGS=0V, IS=13A dIF/dt=100A/s (note 4) | 410 | |||
| Reverse Recovery Charge | Qrr | C | 4.5 | ||||
| THERMAL CHARACTERISTIC | |||||||
| Thermal Resistance, Junction to Case | Rth(j-c) | /W | 2.50 | ||||
| Thermal Resistance, Junction to Ambient | Rth(j-A) | /W | 62.5 | ||||
2411201841_Jilin-Sino-Microelectronics-JCS13N50FT-220MF_C272558.pdf
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