N channel MOSFET Jilin Sino Microelectronics JCS7N60FB 220MF suitable for LED and lamp ballast power
Key Attributes
Model Number:
JCS7N60FB-220MF
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.2Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
-
Output Capacitance(Coss):
150pF
Input Capacitance(Ciss):
1.35nF
Pd - Power Dissipation:
48W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
JCS7N60FB-220MF
Package:
TO-220F-3
Product Description
Product Overview
The JCS7N60B is a N-channel enhancement mode MOSFET designed for high-efficiency switch mode power supplies, electronic lamp ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speeds, 100% avalanche testing, and improved dv/dt capability, making it a RoHS compliant product.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rds(on)-max (@Vgs=10V) () | Qg-typ (nC) |
| JCS7N60BB-B-B / JCS7N60BB-B-BR | JCS7N60BB | TO-262 | 7.0 | 600 | 1.2 | 25 |
| JCS7N60SB-S-B / JCS7N60SB-S-BR / JCS7N60SB-S-A / JCS7N60SB-S-AR | JCS7N60SB | TO-263 | 7.0 | 600 | 1.2 | 25 |
| JCS7N60CB-C-B / JCS7N60CB-C-BR | JCS7N60CB | TO-220C | 7.0 | 600 | 1.2 | 25 |
| JCS7N60FB-F-B / JCS7N60FB-F-BR | JCS7N60FB | TO-220MF | 7.0 | 600 | 1.2 | 25 |
| JCS7N60CB-C1-B / JCS7N60CB-C1-BR | JCS7N60CB | TO-220C-S1 | 7.0 | 600 | 1.2 | 25 |
| Parameter | Symbol | Value | Unit | Notes |
| Drain-Source Voltage | VDSS | 600 | V | |
| Continuous Drain Current | ID | 7.0* | A | T=25, limited by maximum junction temperature |
| Continuous Drain Current | ID | 4.3* | A | T=100, limited by maximum junction temperature |
| Gate-Source Voltage | VGSS | 30 | V | |
| Single Pulsed Avalanche Energy | EAS | 590 | mJ | L=19.5mH, IAS=7.0A, VDD=50V, RG=25, Starting TJ=25 |
| Avalanche Current | IAR | 7.0 | A | limited by maximum junction temperature |
| Repetitive Avalanche Energy | EAR | 14.0 | mJ | limited by maximum junction temperature |
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | ISD 7.0A, di/dt 300A/s, VDDBVDSS, Starting TJ=25 |
| Power Dissipation | PD | 142 | W | TC=25 |
| Power Dissipation Derate | 1.14 | W/ | above 25 | |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | ||
| Maximum Lead Temperature for Soldering | TL | 300 |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 600 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.65 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=600V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=480V, TC=125 | - | - | 100 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=3.5A | - | 1.0 | 1.2 | |
| Forward Transconductance | gfs | VDS = 40V, ID=3.5A | - | 6.2 | - | S |
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 1120 | 1350 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 115 | 150 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 23 | 30 | pF |
| Turn-On delay time | td(on) | VDD=300V,ID=7A,RG=25 | - | 30 | 70 | ns |
| Turn-On rise time | tr | VDD=300V,ID=7A,RG=25 | - | 80 | 170 | ns |
| Turn-Off delay time | td(off) | VDD=300V,ID=7A,RG=25 | - | 125 | 260 | ns |
| Turn-Off Fall time | tf | VDD=300V,ID=7A,RG=25 | - | 60 | 110 | ns |
| Total Gate Charge | Qg | VDS =480V , ID=7A VGS =10V | - | 25 | 35 | nC |
| Gate-Source charge | Qgs | VDS =480V , ID=7A VGS =10V | - | 6.0 | - | nC |
| Gate-Drain charge | Qgd | VDS =480V , ID=7A VGS =10V | - | 10 | - | nC |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=7.0A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=7.0A dIF/dt=100A/s | - | 315 | - | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=7.0A dIF/dt=100A/s | - | 2.6 | - | C |
2411201842_Jilin-Sino-Microelectronics-JCS7N60FB-220MF_C272546.pdf
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