High frequency switching N channel MOSFET Jilin Sino Microelectronics JCS4N65RE with RoHS compliance
Key Attributes
Model Number:
JCS4N65RE
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
100pF
Input Capacitance(Ciss):
890pF
Pd - Power Dissipation:
40.1W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
JCS4N65RE
Package:
DPAK
Product Description
Product Overview
The JCS4N65E is a high-performance N-channel MOSFET designed for high-frequency switching applications. It offers low gate charge, fast switching speeds, and improved dv/dt capability, making it ideal for use in high-frequency switching power supplies, electronic ballasts, and LED power supplies. The product is 100% avalanche tested and RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rds(on)_max () (Vgs=10V) | Qg-typ (nC) | Package Type |
| JCS4N65FE-F1-B | JCS4N65F | TO-220MF-K1 | 4.0 | 650 | 2.5 | 11.9 | Halogen-Tube |
| JCS4N65FE-F1-BR | JCS4N65F | TO-220MF-K1 | 4.0 | 650 | 2.5 | 11.9 | Halogen-Free-Tube |
| JCS4N65FE-F2-B | JCS4N65F | TO-220MF-K2 | 4.0 | 650 | 2.5 | 11.9 | Halogen-Tube |
| JCS4N65FE-F2-BR | JCS4N65F | TO-220MF-K2 | 4.0 | 650 | 2.5 | 11.9 | Halogen-Free-Tube |
| JCS4N65VE-V-B | JCS4N65V | IPAK | 4.0 | 650 | 2.5 | 11.9 | Halogen-Tube |
| JCS4N65VE-V-BR | JCS4N65V | IPAK | 4.0 | 650 | 2.5 | 11.9 | Halogen-Free-Tube |
| JCS4N65RE-R-B | JCS4N65R | DPAK | 4.0 | 650 | 2.5 | 11.9 | Halogen-Tube |
| JCS4N65RE-R-BR | JCS4N65R | DPAK | 4.0 | 650 | 2.5 | 11.9 | Halogen-Free-Tube |
| JCS4N65RE-R-A | JCS4N65R | DPAK | 4.0 | 650 | 2.5 | 11.9 | Halogen-Reel |
| JCS4N65RE-R-AR | JCS4N65R | DPAK | 4.0 | 650 | 2.5 | 11.9 | Halogen-Free-Reel |
| JCS4N65VE-VQ-B | JCS4N65V | TO-251N-S2 | 4.0 | 650 | 2.5 | 11.9 | Halogen-Tube |
| JCS4N65VE-VQ-BR | JCS4N65V | TO-251N-S2 | 4.0 | 650 | 2.5 | 11.9 | Halogen-Free-Tube |
| JCS4N65VE-V5-B | JCS4N65V | IPAK-WS2 | 4.0 | 650 | 2.5 | 11.9 | Halogen-Tube |
| JCS4N65VE-V5-BR | JCS4N65V | IPAK-WS2 | 4.0 | 650 | 2.5 | 11.9 | Halogen-Free-Tube |
| JCS4N65BE-B-B | JCS4N65B | TO-262 | 4.0 | 650 | 2.5 | 11.9 | Halogen-Tube |
| JCS4N65BE-B-BR | JCS4N65B | TO-262 | 4.0 | 650 | 2.5 | 11.9 | Halogen-Free-Tube |
| JCS4N65ME-M-B | JCS4N65M | TO-126-K1 | 4.0 | 650 | 2.5 | 11.9 | Halogen-Tube |
| JCS4N65ME-M-BR | JCS4N65M | TO-126-K1 | 4.0 | 650 | 2.5 | 11.9 | Halogen-Free-Tube |
| JCS4N65MFE-MF-B | JCS4N65MF | TO-126F | 4.0 | 650 | 2.5 | 11.9 | Halogen-Tube |
| JCS4N65MFE-MF-BR | JCS4N65MF | TO-126F | 4.0 | 650 | 2.5 | 11.9 | Halogen-Free-Tube |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit | Package |
| Drain-Source Voltage | VDSS | 650 | V | All |
| Continuous Drain Current (Tc=25) | ID | 4.0 | A | All |
| Continuous Drain Current (Tc=100) | ID | 2.5 | A | All |
| Pulse Drain Current (note 1) | IDM | 16 | A | All |
| Gate-Source Voltage | VGSS | 30 | V | All |
| Single Pulsed Avalanche Energy (note 2) | EAS | 256 | mJ | All |
| Avalanche Current (note 1) | IAR | 4.0 | A | All |
| Repetitive Avalanche Current (note 1) | EAR | 11.0 | mJ | All |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 5.5 | V/ns | All |
| Power Dissipation (TC=25) | PD | 40.1 | W | JCS4N65FE (TO-220MF-K1/TO-220MF-K2) |
| Power Dissipation (TC=25) | PD | 176 | W | JCS4N65RE/VE/B E/ME/MFE |
| Operating and Storage Temperature Range | TJTSTG | -55+150 | All | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | All |
Electrical Characteristics
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Off-Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 650 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.65 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=650V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=520V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.0A | - | 1.9 | 2.5 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.0A, 100 | - | - | 6 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2.0A, 150 | - | - | 9 | |
| Forward Transconductance | gfs | VDS = 40V , ID=2.0Anote 4 | - | 1.36 | - | S |
| Dynamic Characteristics | ||||||
| Gate resistance | Rg | F=1.0MHZ open drain | - | 3.1 | - | |
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 540 | 890 | pF |
| Output capacitance | Coss | - | - | 55 | 100 | pF |
| Reverse transfer capacitance | Crss | - | - | 2.2 | 10 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=325V,ID=4.0A,RG=25 note 45 | - | 21 | 58 | ns |
| Turn-On rise time | tr | - | - | 18 | 52 | ns |
| Turn-Off delay time | td(off) | - | - | 36 | 90 | ns |
| Turn-Off Fall time | tf | - | - | 16 | 50 | ns |
| Total Gate Charge | Qg | VDS =520V , ID=4.0A VGS =10V note 45 | - | 11.9 | 20 | nC |
| Gate-Source charge | Qgs | - | - | 3.0 | 8 | nC |
| Gate-Drain charge | Qgd | - | - | 5.2 | 12 | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | - | 4 | A |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | - | 16 | A |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=4.0A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=4.0A dIF/dt=100A/s (note 4) | - | 288 | 600 | ns |
| Reverse recovery charge | Qrr | - | - | 1.33 | 3.0 | C |
Thermal Characteristics
| Parameter | Symbol | Max | Unit | Package |
| Thermal Resistance, Junction to Case | Rth(j-c) | 3.12 | /W | JCS4N65FE (TO-220MF-K1/K2) |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.71 | /W | JCS4N65RE/VE/B E/ME/MFE |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 46.52 | /W | JCS4N65FE (TO-220MF-K1/K2) |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 72.27 | /W | JCS4N65RE/VE/B E/ME/MFE |
2411201840_Jilin-Sino-Microelectronics-JCS4N65RE_C2693253.pdf
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