High speed switching MOSFET Jilin Sino Microelectronics JCS5N60FC 220MF with low gate charge and Rds
Key Attributes
Model Number:
JCS5N60FC-220MF
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
17pF
Number:
1 N-channel
Output Capacitance(Coss):
82pF
Input Capacitance(Ciss):
810pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
JCS5N60FC-220MF
Package:
TO-220
Product Description
Product Overview
The JCS5N60C is a N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rds(on) () (Vgs=10V) | Qg (nC) |
| JCS5N60VC-V-B / JCS5N60VC-V-BR | N/A | IPAK | 4.0 | 600 | 2.5 | 9 |
| JCS5N60RC-R-B / JCS5N60RC-R-BR / JCS5N60RC-R-A / JCS5N60RC-R-AR | JCS5N60R | DPAK | 4.0 | 600 | 2.5 | 9 |
| JCS5N60CC-C-B / JCS5N60CC-C-BR | N/A | TO-220C | 4.0 | 600 | 2.5 | 9 |
| JCS5N60FC-F-B / JCS5N60FC-F-BR | N/A | TO-220MF | 4.0 | 600 | 2.5 | 9 |
Absolute Maximum Ratings (Tc=25)
| Parameter | Symbol | JCS5N60VC/RC | JCS5N60CC | JCS5N60FC | Unit |
| Drain-Source Voltage | VDSS | 600 | 600 | 600 | V |
| Drain Current -continuous (T=25) | ID | 4.0* | 4.0* | 4.0* | A |
| Drain Current -continuous (T=100) | ID | 2.5* | 2.5* | 2.5* | A |
| Drain Current - pulse (note 1) | IDM | 16* | 16* | 16* | A |
| Gate-Source Voltage | VGSS | 30 | 30 | 30 | V |
| Single Pulsed Avalanche Energy (note 2) | EAS | 416 | 416 | 416 | mJ |
| Avalanche Current (note 1) | IAR | 4.0 | 4.0 | 4.0 | A |
| Repetitive Avalanche Current (note 1) | EAR | 11.0 | 11.0 | 11.0 | mJ |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 5.5 | 5.5 | 5.5 | V/ns |
| Power Dissipation (TC=25) | PD | 51 | 100 | 33 | W |
| Power Dissipation -Derate above 25 | - | 0.39 | 0.80 | 0.26 | W/ |
| Operating and Storage Temperature Range | TJTSTG | -55+150 | |||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | |||
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 600 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.65 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=600V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=480V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2A | - | 2.0 | 2.5 | |
| Forward Transconductance | gfs | VDS = 40V , ID=2Anote 4 | - | 3.7 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 690 | 810 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 62 | 82 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 12 | 17 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=300V,ID=4A,RG=25 note 45 | - | 30 | 50 | ns |
| Turn-On rise time | tr | VDD=300V,ID=4A,RG=25 note 45 | - | 75 | 120 | ns |
| Turn-Off delay time | td(off) | VDD=300V,ID=4A,RG=25 note 45 | - | 60 | 150 | ns |
| Turn-Off Fall time | tf | VDD=300V,ID=4A,RG=25 note 45 | - | 55 | 120 | ns |
| Total Gate Charge | Qg | VDS =480V , ID=4A VGS =10V note 45 | - | 9 | 14 | nC |
| Gate-Source charge | Qgs | VDS =480V , ID=4A VGS =10V note 45 | - | 2.9 | - | nC |
| Gate-Drain charge | Qg | VDS =480V , ID=4A VGS =10V note 45 | - | 4.0 | - | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 4 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 16 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=4.0A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=4.0A dIF/dt=100A/s (note 4) | - | 330 | - | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=4.0A dIF/dt=100A/s (note 4) | - | 2.67 | - | C |
Thermal Characteristics
| Parameter | Symbol | JCS5N60VC/RC | JCS5N60CC | JCS5N60FC | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 2.50 | 1.25 | 3.79 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 83 | 62.5 | 62.5 | /W |
2411201845_Jilin-Sino-Microelectronics-JCS5N60FC-220MF_C272590.pdf
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