Jingdao Microelectronics MM1Z6V8BW Zener Diode with 500mW Power Dissipation and Compact Surface Mount Package
Key Attributes
Model Number:
MM1Z6V8BW
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Impedance(Zzt):
30Ω
Pd - Power Dissipation:
500mW
Zener Voltage(Range):
6.66V~6.94V
Zener Voltage(Nom):
6.8V
Mfr. Part #:
MM1Z6V8BW
Package:
SOD-123W
Product Description
Product Overview
Silicon Planar Zener Diodes with a total power dissipation of Max. 500mW. These diodes offer a wide zener reverse voltage range from 2.0V to 75V and come in a small plastic package suitable for surface-mounted designs. They feature a tolerance of approximately 2%.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin:
- Package: SOD-123W
- Terminals: Solderable per MIL-STD-750, Method 2026
- Approx. Weight: 16mg/0.00056oz
Technical Specifications
| Type | Marking | Zener Voltage Range (VZT at IZT) (V) | Zener Current (IZT) (mA) | Dynamic Impedance (ZZT at IZT) () | Reverse Current (IR at VR Max) (A) | ||
| Min | Nom | Max | Max | Max | |||
| MM1Z2V0BW | 4A | 1.96 | 2.0 | 2.04 | 5 | 100 | 2 |
| MM1Z2V2BW | 4B | 2.16 | 2.2 | 2.24 | 5 | 100 | 2.2 |
| MM1Z2V4BW | 4C | 2.35 | 2.4 | 2.45 | 5 | 100 | 2.4 |
| MM1Z2V7BW | 4D | 2.65 | 2.7 | 2.75 | 5 | 110 | 2.7 |
| MM1Z3V0BW | 4E | 2.94 | 3.0 | 3.06 | 5 | 120 | 3 |
| MM1Z3V3BW | 4F | 3.23 | 3.3 | 3.37 | 5 | 130 | 3.3 |
| MM1Z3V6BW | 4H | 3.53 | 3.6 | 3.67 | 5 | 130 | 3.6 |
| MM1Z3V9BW | 4J | 3.82 | 3.9 | 3.98 | 5 | 130 | 3.9 |
| MM1Z4V3BW | 4K | 4.21 | 4.3 | 4.39 | 5 | 130 | 4.3 |
| MM1Z4V7BW | 4M | 4.61 | 4.7 | 4.79 | 5 | 130 | 4.7 |
| MM1Z5V1BW | 4N | 5 | 5.1 | 5.20 | 5 | 130 | 5.1 |
| MM1Z5V6BW | 4P | 5.49 | 5.6 | 5.71 | 5 | 130 | 5.6 |
| MM1Z6V2BW | 4R | 6.08 | 6.2 | 6.32 | 5 | 130 | 6.2 |
| MM1Z6V8BW | 4X | 6.66 | 6.8 | 6.94 | 5 | 130 | 6.8 |
| MM1Z7V5BW | 4Y | 7.35 | 7.5 | 7.65 | 5 | 130 | 7.5 |
| MM1Z8V2BW | 4Z | 8.04 | 8.2 | 8.36 | 5 | 80 | 8.2 |
| MM1Z9V1BW | 5A | 8.92 | 9.1 | 9.28 | 5 | 50 | 9.1 |
| MM1Z10BW | 5B | 9.8 | 10 | 10.2 | 5 | 30 | 10 |
| MM1Z11BW | 5C | 10.78 | 11 | 11.22 | 5 | 30 | 11 |
| MM1Z12BW | 5D | 11.76 | 12 | 12.24 | 5 | 30 | 12 |
| MM1Z13BW | 5E | 12.74 | 13 | 13.26 | 5 | 30 | 13 |
| MM1Z15BW | 5F | 14.7 | 15 | 15.3 | 5 | 30 | 15 |
| MM1Z16BW | 5H | 15.68 | 16 | 16.32 | 5 | 35 | 16 |
| MM1Z18BW | 5J | 17.64 | 18 | 18.36 | 5 | 35 | 18 |
| MM1Z20BW | 5K | 19.6 | 20 | 20.4 | 5 | 40 | 20 |
| MM1Z22BW | 5M | 21.56 | 22 | 22.44 | 5 | 40 | 22 |
| MM1Z24BW | 5N | 23.52 | 24 | 24.48 | 5 | 45 | 24 |
| MM1Z27BW | 5P | 26.46 | 27 | 27.54 | 5 | 50 | 27 |
| MM1Z30BW | 5R | 29.4 | 30 | 30.6 | 5 | 55 | 30 |
| MM1Z33BW | 5X | 32.34 | 33 | 33.66 | 5 | 60 | 33 |
| MM1Z36BW | 5Y | 35.28 | 36 | 36.72 | 5 | 70 | 36 |
| MM1Z39BW | 5Z | 38.22 | 39 | 39.78 | 5 | 80 | 39 |
| MM1Z43BW | 6A | 42.14 | 43 | 43.86 | 5 | 80 | 43 |
| MM1Z47BW | 6B | 46.06 | 47 | 47.94 | 5 | 90 | 47 |
| MM1Z51BW | 6C | 49.98 | 51 | 52.02 | 5 | 100 | 51 |
| MM1Z56BW | 6D | 54.88 | 56 | 57.12 | 5 | 130 | 56 |
| MM1Z62BW | 6E | 60.76 | 62 | 63.24 | 5 | 150 | 62 |
| MM1Z68BW | 6F | 66.64 | 68 | 69.36 | 5 | 180 | 68 |
| MM1Z75BW | 6H | 73.5 | 75 | 76.5 | 5 | 200 | 75 |
| Parameter | Symbol | Value | Unit |
| Total power dissipation | Ptot | 500 | mW |
| Operating and Storage Temperature Range | Tj, Tstg | -55 ~ +150 | C |
| Forward Voltage at IF = 10 mA | VF | 0.9 | V |
| Typical thermal resistance junction to ambient | RJA | 340 | C/W |
2209140930_Jingdao-Microelectronics-MM1Z6V8BW_C4749058.pdf
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