High frequency switching transistor Jilin Sino Microelectronics JCS540CT 220C with low gate charge
Key Attributes
Model Number:
JCS540CT-220C
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
33A
Operating Temperature -:
-55℃~+150℃
RDS(on):
44mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
90pF
Number:
1 N-channel
Output Capacitance(Coss):
405pF
Input Capacitance(Ciss):
1.64nF
Pd - Power Dissipation:
130W
Gate Charge(Qg):
47nC@10V
Mfr. Part #:
JCS540CT-220C
Package:
TO-220
Product Description
Product Overview
The JCS540T is a N-channel enhancement mode field-effect transistor designed for high-frequency switching power supplies, electronic lamp ballasts, and UPS systems. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Order Code | Package | Marking | ID (A) | VDSS (V) | Rdson-max (@Vgs=10V) (m) | Qg-typ (nC) |
| JCS540BT-B-B | TO-262 | JCS540BT | 33 | 100 | 44 | 37.0 |
| JCS540ST-S-B | TO-263 | JCS540ST | 33 | 100 | 44 | 37.0 |
| JCS540CT-C-B | TO-220C | JCS540CT | 33 | 100 | 44 | 37.0 |
| JCS540FT-F-B | TO-220MF | JCS540FT | 33 | 100 | 44 | 37.0 |
| JCS540WT-GE-B | TO-247 | JCS540WT | 33 | 100 | 44 | 37.0 |
Absolute Maximum Ratings (Tc=25)
| Parameter | Symbol | JCS540CT/BT /ST/WT | JCS540FT | Unit |
| Drain-Source Voltage | VDSS | 100 | 100 | V |
| Drain Current -continuous | ID (T=25) | 33* | 33* | A |
| Drain Current -continuous | ID (T=100) | 23* | 23* | A |
| Drain Current - pulse (note 1) | IDM | 132* | 132* | A |
| Gate-Source Voltage | VGSS | 30 | 30 | V |
| Single Pulsed Avalanche Energy (note 2) | EAS | 800 | 800 | mJ |
| Avalanche Current (note 1) | IAR | 33 | 33 | A |
| Repetitive Avalanche Current (note 1) | EAR | 13 | 4.0 | mJ |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 5.9 | 5.9 | V/ns |
| Power Dissipation | PD (TC=25) | 130 | 40 | W |
| Power Dissipation -Derate above 25 | PD | 1.04 | 0.32 | W/ |
| Operating and Storage Temperature Range | TJTSTG | -55+150 | -55+150 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | 300 |
Electrical Characteristics (Tc=25 unless otherwise noted)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Off-Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 100 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.11 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V, TC=25 | - | - | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=80V, TC=125 | - | - | 10 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=16.0A | - | 34 | 44 | m |
| Gate Resistance | RG | f=1.0MHZ open drain | - | 1.8 | - | |
| Forward Transconductance | gfs | VDS = 40V, ID=16.0Anote 4 | - | 19.8 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | - | - | 1260 | 1640 | pF |
| Output capacitance | Coss | - | - | 305 | 405 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 71 | 90 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=50V,ID=33A,RG=25 VGS =10V note 45 | - | 18 | 46 | ns |
| Turn-On rise time | tr | - | 475 | 955 | ns | |
| Turn-Off delay time | td(off) | - | 69 | 149 | ns | |
| Turn-Off Fall time | tf | - | 122 | 252 | ns | |
| Total Gate Charge | Qg | VDS =80V , ID=33A VGS =10V note 45 | - | 37.0 | 47.0 | nC |
| Gate-Source charge | Qgs | - | - | 6.6 | - | nC |
| Gate-Drain charge | Qg | - | - | 20.0 | - | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 33 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 132 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=33A | - | - | 1.4 | V |
| Reverse recovery time | trr | - | - | 85 | ns | |
| Reverse recovery charge | Qrr | VGS=0V, IS=33A dIF/dt=100A/s (note 4) | - | 250 | - | nC |
Thermal Characteristics
| Parameter | Symbol | JCS540CT/BT/ST/WT | JCS540FT | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.96 | 3.12 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | 62.5 | /W |
2411201843_Jilin-Sino-Microelectronics-JCS540CT-220C_C272530.pdf
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