High voltage Power MOSFET Jingdao Microelectronics F10N70L with excellent avalanche energy handling
Key Attributes
Model Number:
F10N70L
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
10A
RDS(on):
1.2Ω@10V,5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9.5pF
Output Capacitance(Coss):
131pF
Pd - Power Dissipation:
50W
Input Capacitance(Ciss):
1.653nF@25V
Gate Charge(Qg):
29nC@10V
Mfr. Part #:
F10N70L
Package:
TO-220F-3L
Product Description
Product Overview
The F10N70L is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is commonly used in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong, China
- Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free"
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 700 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 10 | A | Tc=25°C |
| Continuous Drain Current | ID | 6.3 | A | Tc=100°C |
| Pulsed Drain Current (Note 2) | IDM | 40 | A | |
| Avalanche Energy Single Pulsed (Note 3) | EAS | 50 | mJ | |
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 2.1 | V/ns | |
| Power Dissipation | PD | 1653 | W | Tc=25°C |
| Operation Junction Temperature and Storage Temperature | Tj, stg | -55 ~ +150 | °C | |
| THERMAL DATA | ||||
| Junction to Ambient | RthJA | 62.5 | °C/W | Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. |
| Junction to Case | RthJC | 2.5 | °C/W | |
| OFF CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 700 | V | VGS=0V, ID=0.25mA |
| Gate-Source Leakage Current | IGSS | ±100 | nA | VGS=±30V, VDS=0V |
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=700V, VGS=0V |
| ON CHARACTERISTICS | ||||
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS, ID=0.25mA |
| Static Drain-Source On-State Resistance | RDS(ON) | 1.2 | Ω | VGS=10V, ID=5.0A |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | CISS | 131 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 29 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 13 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| SWITCHING CHARACTERISTICS | ||||
| Total Gate Charge | QG | 43 | nC | VDS=350V, VGS=10V, ID=10A, RG=25Ω (Note 1,2) |
| Gate-Drain Charge | QGD | 10 | nC | VDS=350V, VGS=10V, ID=10A, RG=25Ω (Note 1,2) |
| Gate-Source Charge | QGS | 41 | nC | VDS=350V, VGS=10V, ID=10A, RG=25Ω (Note 1,2) |
| Turn-On Delay Time | tD(ON) | 82 | ns | VDS=350V, VGS=10V, ID=10A, RG=25Ω (Note 1,2) |
| Turn-On Rise Time | tR | 41 | ns | VDS=350V, VGS=10V, ID=10A, RG=25Ω (Note 1,2) |
| Turn-Off Delay Time | tD(OFF) | 100 | ns | VDS=350V, VGS=10V, ID=10A, RG=25Ω (Note 1,2) |
| Turn-Off Fall Time | tF | 561 | ns | VDS=350V, VGS=10V, ID=10A, RG=25Ω (Note 1,2) |
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | ||||
| Maximum Body-Diode Continuous Current | IS | 10 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 40 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=10A, VGS=0V (Note 1) |
| Reverse Recovery Time | trr | 4.3 | µs | IS=10A, VGS=0V, di/dt=100A/µs (Note 1) |
| Reverse Recovery Charge | Qrr | 561 | µC | IS=10A, VGS=0V, di/dt=100A/µs (Note 1) |
2209091800_Jingdao-Microelectronics-F10N70L_C5157068.pdf
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