Power management and pwm control dual N channel enhancement mode power mosfet Jingdao Microelectronics NM8205
Key Attributes
Model Number:
NM8205
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-50℃~+150℃
RDS(on):
26mΩ@4.5V,4A
Gate Threshold Voltage (Vgs(th)):
450mV
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
125pF@10V
Number:
2 N-Channel
Output Capacitance(Coss):
155pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
800pF@10V
Gate Charge(Qg):
11nC
Mfr. Part #:
NM8205
Package:
SOT-26
Product Description
NM8205 Dual N-channel Enhancement Mode Power MOSFET
The NM8205 is a Dual N-channel Enhancement Mode Power MOSFET from Jingdao Microelectronics, featuring advanced Trench Technology. It offers excellent RDS(ON) and low gate charge, making it suitable for load switching, power management, and PWM applications. This lead-free product is designed for high efficiency and reliable performance.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Product Code: NM8205
- Origin: Shandong, China
- Package Type: SOT-26
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Conditions | Minimum | Typical | Maximum | Units |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 20 | V | |||
| Gate-Source Voltage | VGSS | ±10 | V | |||
| Continuous Drain Current | ID | TA=25 | 5 | A | ||
| Continuous Drain Current | ID | TA=100 | 3.2 | A | ||
| Pulsed Drain Current | IDM | TA=25 | 20 | A | ||
| Power Dissipation | PD | TA=25 | 1.5 | W | ||
| Thermal Resistance, Junction to Ambient | RθJA | 83.3 | /W | |||
| Operating and Storage Temperature Range | TJ,TSTG | -50 | +150 | |||
| Electrical Characteristics (TA=25 unless otherwise specied) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=250uA | 20 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=20V,VGS=0V | 0.7 | V | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS=2.5V,ID=3.0A | 20 | 21 | mΩ | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=4.5V,ID=4.0A | 20 | mΩ | ||
| Gate-to-Source Leakage Current | IGSS | VGS=0V,ID=250uA | ±100 | nA | ||
| Gate-Body Leakage Current | IDSS | VDS=20V,VGS=0V | ±1 | uA | ||
| Input Capacitance | Ciss | VDS=10V,VGS=0V, f=1.0MHz | 800 | pF | ||
| Output Capacitance | Coss | VDS=10V,VGS=0V, f=1.0MHz | 125 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=10V,VGS=0V, f=1.0MHz | 155 | pF | ||
| Total Gate Charge | Qg | VDS=10V,VGS=4.5V, ID=3A | 11 | 18 | nC | |
| Gate-Source Charge | Qgs | VDS=10V,VGS=4.5V, ID=3A | 2.3 | nC | ||
| Gate-Drain(Miller) Charge | Qgd | VDS=10V,VGS=4.5V, ID=3A | 2.5 | nC | ||
| Turn-on Delay Time | td(on) | RGEN=3Ω | 5 | ns | ||
| Turn-on Rise Time | tr | RGEN=3Ω | 11 | ns | ||
| Turn-o Delay Time | td(off) | RGEN=3Ω | 20 | ns | ||
| Turn-o Fall Time | tf | RGEN=3Ω | 43 | ns | ||
2208301630_Jingdao-Microelectronics-NM8205_C5156806.pdf
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