N channel Power MOSFET Jingdao Microelectronics D7N65 designed for low on state resistance and fast switching
Key Attributes
Model Number:
D7N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
RDS(on):
1.3Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.5pF
Output Capacitance(Coss):
90pF
Pd - Power Dissipation:
32W
Input Capacitance(Ciss):
1.08nF
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
D7N65
Package:
TO-252
Product Description
Product Overview
The D7N65 is a high voltage N-channel Power MOSFET featuring advanced trench MOSFET technology. It offers fast switching times, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is ideal for high-speed switching applications in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong, China
- Material: "Green" molding compound, UL flammability classification 94V-0, Halogen-free
- Color: Not specified
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 650 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 7 | A | Tc=25°C |
| Continuous Drain Current | ID | 4.5 | A | Tc=100°C |
| Pulsed Drain Current | IDM | 28 | A | Note 2 |
| Power Dissipation | PD | 32 | W | |
| Single Pulsed Avalanche Energy | EAS | 281.3 | mJ | Note 3 |
| Peak Diode Recovery dv/dt | dv/dt | 50 | V/ns | Note 4 |
| Operation Junction and Storage Temperature | Tj, stg | -55 ~ +150 | °C | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | ID=250µA, VGS=0V |
| Gate-Source Leakage Current | IGSS | ±1 | µA | VGS=±30V, VDS=0V |
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=650V, VGS=0V |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS, ID=250µA |
| Static Drain-Source On-State Resistance | RDS(ON) | 1.35 | Ω | VGS=10V, ID=3.5A |
| Input Capacitance | CISS | 1080 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 90 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 22 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Total Gate Charge | QG | 74 | nC | VDS=520V, VGS=10V, ID=7A, IG=1mA (Note 1,2) |
| Turn-On Delay Time | tD(ON) | 20 | ns | VDS=100V, VGS=10V, ID=7A, RG=25Ω (Note 1,2) |
| Turn-On Rise Time | tR | 33 | ns | VDS=100V, VGS=10V, ID=7A, RG=25Ω (Note 1,2) |
| Turn-Off Delay Time | tD(OFF) | 7 | ns | VDS=100V, VGS=10V, ID=7A, RG=25Ω (Note 1,2) |
| Turn-Off Fall Time | tF | 14 | ns | VDS=100V, VGS=10V, ID=7A, RG=25Ω (Note 1,2) |
| Maximum Body-Diode Continuous Current | IS | 7 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 28 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=7A, VGS=0V (Note 1) |
| Reverse Recovery Time | trr | 506 | ns | IS=7A, VGS=0V, di/dt=100A/us (Note 1) |
| Reverse Recovery Charge | Qrr | 2.7 | µC | IS=7A, VGS=0V, di/dt=100A/us (Note 1) |
| THERMAL DATA | ||||
| Junction to Ambient Thermal Resistance | RthJA | 63 | °C/W | |
| Junction to Case Thermal Resistance | RthJC | 0.95 | °C/W | |
2201121700_Jingdao-Microelectronics-D7N65_C2935479.pdf
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