High Speed Switching MOSFET Jingdao Microelectronics F12N65L with 12A continuous drain current rating
Key Attributes
Model Number:
F12N65L
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
12A
RDS(on):
850mΩ@10V,12A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
5pF
Pd - Power Dissipation:
51W
Input Capacitance(Ciss):
2nF@25V
Gate Charge(Qg):
36nC@10V
Mfr. Part #:
F12N65L
Package:
TO-220F-3L
Product Description
Product Overview
The F12N65L is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is typically used in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong, China
- Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free"
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 650 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 12 | A | Tc=25°C, Tc=100°C |
| Pulsed Drain Current | IDM | 48 | A | Note 2 |
| Power Dissipation | PD | 51 | W | Tc=25°C |
| Avalanche Energy Single Pulsed | EAS | 790 | mJ | Note 3 |
| Peak Diode Recovery dv/dt | dv/dt | 50 | V/ns | Note 4 |
| Operation Junction and Storage Temperature | Tj, stg | -55 ~ +150 | °C | |
| THERMAL DATA | ||||
| Junction to Ambient | RthJA | 62.5 | °C/W | |
| Junction to Case | RthJC | 2.44 | °C/W | |
| OFF CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250µA |
| Gate-Source Leakage Current | IGSS | ±100 | nA | VGS=±30V, VDS=0V |
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=650V, VGS=0V |
| ON CHARACTERISTICS | ||||
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS, ID=250µA |
| Static Drain-Source On-State Resistance | RDS(ON) | 0.85 | Ω | VGS=10V, ID=12A |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | CISS | 2000 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 160 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 36 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| SWITCHING CHARACTERISTICS | ||||
| Total Gate Charge | QG | 115 | nC | VDS=520V, VGS=10V, ID=12A, IG=1mA (NOTE1,2) |
| Gate-Drain Charge | QGD | 23 | nC | VDS=520V, VGS=10V, ID=12A, IG=1mA (NOTE1,2) |
| Gate-Source Charge | QGS | 32 | nC | VDS=520V, VGS=10V, ID=12A, IG=1mA (NOTE1,2) |
| Turn-On Delay Time | tD(ON) | 10 | ns | VDS=325V, VGS=10V, ID=12A, RG=25Ω (NOTE1,2) |
| Turn-On Rise Time | tR | 8.6 | ns | VDS=325V, VGS=10V, ID=12A, RG=25Ω (NOTE1,2) |
| Turn-Off Delay Time | tD(OFF) | 22 | ns | VDS=325V, VGS=10V, ID=12A, RG=25Ω (NOTE1,2) |
| Turn-Off Fall Time | tF | 12 | ns | VDS=325V, VGS=10V, ID=12A, RG=25Ω (NOTE1,2) |
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | ||||
| Maximum Body-Diode Continuous Current | IS | 12 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 48 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=12A, VGS=0V |
| Reverse Recovery Time | trr | 470 | ns | IS=12A, VGS=0V, di/dt=100A/us |
| Reverse Recovery Charge | Qrr | 12 | µC | IS=12A, VGS=0V, di/dt=100A/us |
2209091800_Jingdao-Microelectronics-F12N65L_C5157069.pdf
Related Products
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
