Jingdao Microelectronics V4N65 MOSFET Offering High Voltage Rating and Low Gate Charge for Switching
Key Attributes
Model Number:
V4N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
RDS(on):
2.6Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Output Capacitance(Coss):
55pF
Pd - Power Dissipation:
54W
Input Capacitance(Ciss):
560pF
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
V4N65
Package:
TO-251W
Product Description
Product Overview
The V4N65 is a high voltage N-channel Power MOSFET designed with advanced trench technology. It offers superior characteristics such as fast switching times, low gate charge, low on-state resistance, and high rugged avalanche capability. This MOSFET is ideal for high-speed switching applications, commonly found in switching power supplies and adapters.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: China ()
- Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free"
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 650 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 4 | A | Tc=25°C |
| Continuous Drain Current | ID | 2.5 | A | Tc=100°C |
| Pulsed Drain Current | IDM | 173 | A | Note 2 |
| Avalanche Energy Single Pulsed | EAS | 54 | mJ | Note 3 |
| Peak Diode Recovery dv/dt | dv/dt | 2.1 | V/ns | Note 4 |
| Power Dissipation | PD | 54 | W | Tc=25°C |
| Operation Junction and Storage Temperature | Tj, stg | -55 ~ +150 | °C | |
| THERMAL DATA | ||||
| Junction to Ambient | RthJA | 63 | °C/W | |
| Junction to Case | RthJC | 2.31 | °C/W | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V,ID=250µA |
| Gate-Source Leakage Current | IGSS | ±100 | nA | VGS=±30V,VDS=0V |
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=650V,VGS=0V |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS,ID=250µA |
| Static Drain-Source On-State Resistance | RDS(ON) | 2.6 | Ω | VGS=10V,ID=2.0A |
| Input Capacitance | CISS | 560 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 10 | pF | |
| Output Capacitance | COSS | 55 | pF | |
| Total Gate Charge | QG | 13 | nC | VDS=520V,VGS=10V, ID=4A,IG=1mA (NOTE1,2) |
| Gate-Drain Charge | QGD | 4.0 | nC | |
| Gate-Source Charge | QGS | 7 | nC | |
| Turn-On Delay Time | tD(ON) | 36 | ns | VDS=100V,VGS=10V, ID=4A,RG=25Ω (NOTE1,2) |
| Turn-On Rise Time | tR | 16 | ns | |
| Turn-Off Delay Time | tD(OFF) | 22 | ns | |
| Turn-Off Fall Time | tF | 4 | ns | |
| Maximum Body-Diode Continuous Current | IS | 4 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 16 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=4A,VGS=0V |
| Reverse Recovery Time | trr | 250 | ns | IS=4A,VGS=0V, di/dt=100A/us |
| Reverse Recovery Charge | Qrr | 4.5 | µC | IS=4A,VGS=0V, di/dt=100A/us |
2201121700_Jingdao-Microelectronics-V4N65_C2935476.pdf
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