Power switch and charging circuit P Channel MOSFET transistor JingYang TPM04K20BX for DC DC conversion
Key Attributes
Model Number:
TPM04K20BX
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
500mA
Operating Temperature -:
-55℃~+155℃
RDS(on):
345mΩ@4.5V,0.3A
Gate Threshold Voltage (Vgs(th)):
1.2V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
10.2pF@10V
Number:
1 P-Channel
Output Capacitance(Coss):
10.8pF
Input Capacitance(Ciss):
74.5pF@10V
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
900pC@4.5V
Mfr. Part #:
TPM04K20BX
Package:
DFN1006-3L
Product Description
Product Overview
The TPM04K20BX is a P-Channel enhancement MOSFET transistor designed using advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications.Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | VDSS | -20 | V | |||
| VGSS | 8 | V | ||||
| ID (Continuous) | TA=25C | -0.5 | A | |||
| IDM (Pulse) | *B | -1.2 | A | |||
| Power Dissipation | PD | 0.3 | W | |||
| Operating/Storage Temperature | TJ/TSTG | -55 | 155 | C | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 416 | C/W | |||
| Electrical Characteristics | V(BR)DSS | VGS=0VID=-250uA | -20 | V | ||
| IDSS | VDS=-20VVGS=0V | -1 | uA | |||
| VGS(TH) | VDS=VGSIDS=-250uA | -0.4 | -1.2 | V | ||
| IGSS | VGS=8VVDS=0V | 10 | uA | |||
| RDS(on) | VGS=-4.5VID=-0.3A | 345 | m | |||
| VGS=-2.5VID=-0.3A | 555 | m | ||||
| Capacitance | Ciss | VGS=0VVDS=-10Vf=1MHZ | 74.5 | pF | ||
| Coss | 10.8 | pF | ||||
| Crss | 10.2 | pF | ||||
| Reverse Diode Characteristics | ISD | VG=VD=0V , Force Current | -0.5 | A | ||
| VSD | ISD=-0.5AVGS=0V | -1.2 | V |
2409302231_JingYang-TPM04K20BX_C5307994.pdf
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