power switching N channel MOSFET JingYang TNM02K100KX with ultra low RDS ON and avalanche current rating
Key Attributes
Model Number:
TNM02K100KX
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2.2A
RDS(on):
260mΩ@4.5V,1A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF@50V
Number:
1 N-channel
Output Capacitance(Coss):
88pF
Pd - Power Dissipation:
2.5W
Input Capacitance(Ciss):
330pF@50V
Gate Charge(Qg):
5.2nC@10V
Mfr. Part #:
TNM02K100KX
Package:
SOT-23
Product Description
Product Overview
The TNM02K100KX is a N-channel MOSFET designed for high-efficiency power switching applications. It features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and excellent package heat dissipation. This device is ideal for Uninterruptible Power Supplies (UPS), hard-switched and high-frequency circuits.
Product Attributes
- Brand: JY Electronics
- Package: SOT-23
- Origin: China
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings (TC=25 unless otherwise specified) | ||||||
| VDSS | Drain-Source Voltage | - | - | 100 | V | |
| VGSS | Gate-Source Voltage | - | - | ±20 | V | |
| ID | Continuous Drain Current | TC = 25 | - | - | 2.2 | A |
| TC = 100 | - | - | 1.5 | A | ||
| IDM | Pulsed Drain Current | note1 | - | - | 12 | A |
| PD | Power Dissipation | TA = 25 | - | 2.5 | - | W |
| 3.9 | - | W | ||||
| 5 | - | - | W | |||
| RJA | Thermal Resistance, Junction to Ambient | - | 50 | - | /W | |
| - | 32 | - | /W | |||
| - | 25 | - | /W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | - | +150 | ||
| Electrical Characteristics (TC=25 unless otherwise specified) | ||||||
| Off Characteristic | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V,ID=250μA | 100 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=100V, VGS = 0V | - | - | 1.0 | μA |
| IGSS | Gate to Body Leakage Current | VDS =0V,VGS = ±20V | - | - | ±100 | nA |
| On Characteristic | ||||||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250μA | 1.0 | 1.8 | 3.0 | V |
| RDS(on) | Static Drain-Source on-Resistance | note2 VGS =10V, ID =2A | - | 250 | 280 | mΩ |
| VGS =4.5V, ID =1A | - | 260 | 310 | mΩ | ||
| gFS | Forward Transconductance | VDS =10V, ID =3A | - | 1.1 | - | S |
| Dynamic Characteristic | ||||||
| Ciss | Input Capacitance | VDS =50V, VGS = 0V, f = 1.0MHz | - | 330 | - | pF |
| Coss | Output Capacitance | - | 88 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 15 | - | pF | |
| Gate Charge | ||||||
| Qg | Total Gate Charge | VDS =50V, ID =1A, VGS =10V | - | 5.2 | - | nC |
| Qgs | Gate-Source Charge | - | 1.0 | - | nC | |
| Qgd | Gate-Drain(Miller) Charge | - | 1.4 | - | nC | |
| Switching Characteristic | ||||||
| td(on) | Turn-on Delay Time | VDD=50V,RL=39Ω, RG=1Ω, VGS =10V | - | 14 | - | ns |
| tr | Turn-on Rise Time | - | 54 | - | ns | |
| td(off) | Turn-off Delay Time | - | 18 | - | ns | |
| tf | Turn-off Fall Time | - | 11 | - | ns | |
| Drain-Source Diode Characteristic and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | 3 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | 12 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS = 0V, IS=1A | - | - | 1.2 | V |
2405091033_JingYang-TNM02K100KX_C5307987.pdf
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