PNP Silicon Epitaxial Planar Transistor JKSEMI MMBT2907A SOT23 Package Complementary NPN Type MMBT2222A
Key Attributes
Model Number:
MMBT2907A
Product Custom Attributes
Current - Collector Cutoff:
20nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
200MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
60V
Mfr. Part #:
MMBT2907A
Package:
SOT-23
Product Description
Product Overview
The MMBT2907A is a PNP silicon epitaxial planar transistor featuring complementary NPN type availability (MMBT2222A). It is constructed with epitaxial planar die and comes in a SOT-23 package, marked with '2F'.
Product Attributes
- Brand: KELM
- Origin: China
- Model: MMBT2907A
- Mark: 2F
- Package: SOT-23
- Complementary NPN Type: MMBT2222A
- Website: http://www.jksemi.com
- Date: 2021-10-21
- Version: c
Technical Specifications
| Parameter | Symbol | Test Conditions | MIN | TYP | MAX | Unit |
| Absolute Maximum Ratings | ||||||
| Collector-Base Voltage | VCBO | -60 | V | |||
| Collector-Emitter Voltage | VCEO | -60 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current -Continuous | IC | -600 | mA | |||
| Collector Dissipation | PC | 250 | mW | |||
| Junction and Storage Temperature | Tj,Tstg | -55 | 150 | |||
| Electrical Characteristics (TA = 25C unless otherwise noted) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-10 A,IE=0 | -60 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-10mA,IB=0 | -60 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10 A,IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB =-50V,IE=0 | -20 | nA | ||
| Collector cut-off current | ICEX | VCE =-30V,VBE(off) =-0.5V | -50 | nA | ||
| Emitter cut-off current | IEBO | VEB=-5V,IC=0 | -10 | nA | ||
| DC current gain | hFE | VCE=-10V,IC=-10mA | 100 | |||
| VCE=-10V,IC=-150mA | 100 | 300 | ||||
| VCE =-10V,IC=-500mA | 50 | |||||
| Collector-emitter saturation voltage | VCE(sat) | IC= -150mA, IB= -15mA | -0.4 | V | ||
| Base-emitter voltage | VBE | IC= -150mA, IB= -15mA | -1.3 | V | ||
| Transition frequency | fT | VCE =20V, IC= 50mA | 200 | MHz | ||
| Collector Output Capacitance | COb | VCB =10V, IE =0 f=1MHz | 80 | PF | ||
| Switching Characteristics (TA = 25C unless otherwise noted) | ||||||
| Turn-on Time | ton | VCE =-30V, IC=-150mA, IB1=-15mA | 45 | ns | ||
| Delay Time | td | 10 | ns | |||
| Rise Time | tr | 40 | ns | |||
| Turn-off Time | toff | VCE =-6V, IC=-150mA, IB1=IB2 =-15mA | 100 | ns | ||
| Storage Time | ts | 80 | ns | |||
| Fall Time | tf | 30 | ns | |||
2410122024_JKSEMI-MMBT2907A_C2972764.pdf
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